Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof

A composite phase-change material and phase-change memory technology, applied in the direction of electrical components, etc., can solve problems such as poor crystallization speed, difficult application, and reliability of devices that affect the erasing and writing speed

Active Publication Date: 2012-07-11
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0004] In phase change memory, Ge 2 Sb 2 Te 5 It is a typical phase change material, but it is found in the application that Ge 2 Sb 2 Te 5 The material has a large density change during the phase transition, and the crystallization speed is not good, generally hundreds of ns, which will affect the erasing speed and device reliability. In addition, its crystallization temperature is relatively low, about 160°C, which makes its Difficulty in application at high temperatures

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  • Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof
  • Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof
  • Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof

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Embodiment Construction

[0027] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] The present invention Sb 2 Te y -Si 3 N 4 Composite phase change materials can be prepared in various ways, such as magnetron sputtering and multi-target co-sputtering. For example, Sb 2 Te 3 、Si 3 N 4 Co-sputtering of two alloy targets, the composition can be adjusted by controlling the power of the two target positions, and Sb targets, Te targets and SiN targets can also be used 4 Alloy target for co-sputtering to prepare thin film, or use Sb target, Te target, Si target and N 2 Co-sputtering, these methods can be used to prepare phase change materials of various compositions. In this example, Sb 2 Te 3 target and Si 3 N 4 Target co-sputtering as an example to prepare thin film samples.

[0029] Using Sb 2 Te 3 target and Si 3 N 4 The method of target co-sputtering, in the process of co-sputtering, Ar gas with a puri...

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Abstract

The invention discloses a Sb2Tey-Si3N4 composite phase change material for a phase change memory and a preparation method thereof. The material is a mixture containing four elements, namely antimony, tellurium, nitrogen and silicon; a Sb2Tey (y is more than 1 and less than 3) phase change material with reversible phase change capability is isolated by amorphous Si3N4 to form a nano-scale region, then a composite structure is formed, and the chemical formula is (Sb2Tey)x(Si3N4)100-x, wherein y is more than 1 and less than 3, and x is more than 60 and less than 100. By regulating the content of Si3N4 in the Sb2Tey-Si3N4 composite phase change material, different crystallization temperatures, melting points and crystallization activation energy can be obtained. Compared with a traditional Sb2Te3 material, the (Sb2Tey)x(Si3N4)100-x has higher crystallization temperature, better thermal stability and data retention and lower melting point; and furthermore, grain size after crystallization is small and energy consumption is low.

Description

technical field [0001] The invention relates to a composite phase-change composite material in the technical field of microelectronics, more precisely, a composite phase-change composite material composed of a mixture of antimony-tellurium-nitrogen-silicon. Background technique [0002] In the semiconductor market, memory occupies an important seat, and only DRAM and FLASH account for 15% of the entire market. With the gradual popularization of portable electronic devices, the market for non-volatile memory will continue to expand. The requirements for capacity, speed and other aspects will gradually increase. As the mainstream memory of non-volatile memory, the development of FLASH technology has reached a bottleneck. With the continuous development of integrated circuits, the technical weakness of FLASH has become prominent. The disadvantages of slow writing speed, high writing voltage, and limited number of cycles directly limit its further application. Therefore, a new ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 宋志棠许建安饶峰吴良才刘波
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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