Liquid crystal device comprising array of sensor circuits with voltage-dependent capacitor
A sensor circuit, liquid crystal device technology, applied in the direction of instrument, electrical digital data processing, data processing input/output process, etc., can solve problems such as mismatch and low sensitivity, and achieve the effect of reducing manufacturing cost and improving sensitivity
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no. 1 example
[0095] The first embodiment illustrates the basic concept of utilizing a voltage sensitive select capacitor to increase the sensitivity of the output of an active pixel sensor circuit to changes in liquid crystal capacitance.
[0096] The first embodiment relates to a liquid crystal device including a first array composed of a plurality of first sensor circuits. In this embodiment, each first sensor circuit is an active pixel sensor circuit. Such as Figure 9 As shown in , the active pixel sensor circuit constituting the first sensor circuit of this embodiment includes: a data line DAT; a power supply line VDD; a row selection line RWS; an amplifier M1; component CV; and voltage sensitive selection capacitor C1. The input of the amplifier is connected to the first terminal of the sensing capacitor.
[0097] The second terminals of the sensing capacitors of each first sensor circuit may be connected to the common voltage line VCOM such that the second terminals of the sensin...
no. 2 example
[0122] In a second embodiment of the present invention, the selection capacitor of the first embodiment may be constituted by a second Metal Oxide Semiconductor Field Effect Transistor (MOSFET) such as a Thin Film Transistor (TFT). The transistor may be a p-type transistor with a gate terminal connected to row select line RWS and source and drain terminals together connected to the gate terminal of the amplifier transistor. Figure 14 This configuration is shown in which transistor M2 constitutes a voltage sensitive select capacitor.
[0123] The voltage V between the gate terminal and source terminal of transistor M2 GS less than the threshold voltage of the transistor V T,M2 In the first state of , the transistor is turned on and exhibits a gate-drain capacitance, a gate-source capacitance, and a gate-channel capacitance (C GD,M2 、C GS,M2 and C GC,M2 ) is equal to the sum of capacitance C 1A . The voltage V between the gate terminal and source terminal of transistor M2...
no. 3 example
[0126] In a third embodiment of the present invention, the selection capacitor of the first embodiment may be formed of an n-type transistor. exist Figure 15 In this circuit shown in , the gate terminal of the transistor M2 constituting the selection capacitor is connected to the gate terminal of the amplifier transistor M1, and the source and drain terminals of M2 are connected together to the row selection line RWS. Likewise, this transistor exhibits Figure 10 The desired voltage-capacitance relationship shown in .
[0127] The operation of the circuit is as previously described in relation to the first and second embodiments.
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