Multi-junction solar cell and manufacturing method thereof

Abstract

The invention discloses a multi-junction solar cell, including the components as following: a double-junction solar sell comprised of a GaAs sub cell and a GaInP sub cess, wherein the GaAs sub cell possesses a first metal pattern; an Si sub sell, which possesses a second metal pattern, wherein the second metal pattern is corresponding to at least part of the first metal pattern; the conductive bonding layer is formed by the mechanical bonding of the first metal pattern and the second metal pattern, and the conductive bonding layer enables the Si sub cell electrically connected to the GaAs sub cell. Because a Ge sub cell is replaced by the Si sub cell, the multi-junction solar cell provided in the invention can effectively utilizes the band with energy of 1 eV, and thereby the total conversion efficiency can be further enhanced. In addition, a Ge base with high cost is no more required, and the multi-junction solar cell provided in the invention can be prepared with lower cost.

Description

technical field [0001] The invention relates to a multi-junction solar cell and a manufacturing method thereof. Background technique [0002] As a clean energy source, solar cells have always been the most dynamic research field. Solar cells can be roughly divided into three generations. The first generation is silicon crystal battery, which can be roughly divided into two types: monocrystalline silicon and polycrystalline silicon, and its commercial application history is the longest. The second generation is thin-film solar cells, which are mainly composed of amorphous silicon and group II compound semiconductors, and are often used in building-integrated photovoltaic power generation. The third generation is high-efficiency multi-junction solar cells represented by gallium arsenide solar cells, which have been used in the space field for a long time, but due to the relatively high price of gallium arsenide cells, they were rarely used in the past Ground and household c...

AI Technical Summary

Problems solved by technology

The third generation is high-efficiency multi-junction solar cells represented by gallium arsenide solar cells, which have been used in the space field for a long time, but due to the relatively high price of gallium arsenide cells, they were rarely used in the past Ground and household consumption

However, as stated in the literature, due to the lattice mismatch problem between Si and Ge, the growth technique of this scheme is quite complicated, and it is necessary to grow a stress transition layer and a stress complete relaxation layer.

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