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Luminescent device

A technology for light-emitting devices and light-emitting layers, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as low luminous intensity, and achieve the effect of improving reliability and service life

Inactive Publication Date: 2015-04-29
矽光光电科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the light emission of these LED structures is spectrally stable and polarized, due to the 2 During the growth process on the substrate, there will be many defects in the GaN crystal, and its luminous intensity is low

Method used

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Examples

Experimental program
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Embodiment Construction

[0036] refer to figure 2 , the light-emitting device 200 includes a silicon substrate 210 having an upper surface 201 on a (100) crystal plane, a groove 220 at least partially defined as a (111) crystal plane 202 , buffer and reflectors on the surface 202 layer 230, a doped GaN crystal structure 240 on the buffer and reflective layer 230, and a light-emitting layer; the light-emitting layer further includes a quantum well layer 250 on the doped GaN crystal structure 240, and a quantum well layer 250 on the quantum The doped GaN layer 260 on the well layer 250 . The doped GaN crystal structure 240 and the doped GaN layer 260 have electrical conductivity and can serve as the lower electrode and the upper electrode of the quantum well layer 250 respectively. An electrode layer 205 formed on the upper surface 201 is electrically connected to the doped GaN layer 260 .

[0037] The groove 220 in the light emitting device 200 is formed on the (100) crystal plane (ie, the upper sur...

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Abstract

The invention relates to a luminescent device. The luminescent device comprises a silicon substrate taking a crystal surface (100) as an upper surface. A groove is formed in the upper surface; one part of the groove is defined as a crystal surface of a silicon substrate (111). The luminescent device comprises a GaN crystal structure positioned on one crystal surface (111) of the silicon substrate; the GaN crystal structure comprises a non-polar plane and a first surface arranged along the non-polar plane; the luminescent device also comprises a luminous layer which is positioned on the first surface of the GaN crystal structure; and the luminous layer is provided with at least one GaN quantum well. According to the luminescent device disclosed by the invention, the non-polar and semi-polar GaN crystal surfaces are used as quantum substrates, so that the luminous efficiency and the light transmitting strength are improved; and in addition, transmitting light is highly polarized, very low defect density for the GaN crystal can be provided and further the reliability of the luminescent device is improved and the service life of the luminescent device is prolonged.

Description

technical field [0001] The invention relates to a light emitting device which is a solid state light source. Background technique [0002] Solid-state light sources, such as light-emitting diodes (LEDs) and laser diodes, offer significant advantages over incandescent or fluorescent lamps. Solid-state light sources are generally more efficient and produce less heat than traditional incandescent or fluorescent lights. When light-emitting diodes (LEDs) or laser diodes are placed in rows of red, green, and blue elements, they can be used as white light sources or multicolor displays. Despite certain advantages of solid-state lighting, conventional semiconductor structures and devices for solid-state lighting are relatively expensive. The high cost of solid-state light-emitting devices is due in part to their relatively complex and time-consuming production processes. [0003] according to figure 1 As shown, a prior art LED structure 100 includes a substrate 105, such as a sa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/16H01L33/20
Inventor 潘小和陈杰嘉鼎·斐迈克·亨利肯
Owner 矽光光电科技(上海)有限公司