Method for preparing high-temperature superconducting gadolinium-barium-copper-oxygen thin film by utilizing chemical solution method
A technology of high-temperature superconducting thin film and chemical solution method, which is applied in metal material coating process, coating, etc., can solve the problems of long cycle, complicated process, rough surface of film, etc., and achieves improved preparation efficiency, low preparation cost, good The effect of superconducting properties
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0035] 2) Preparation and drying of the gel film:
[0036] The fluorine-containing gadolinium barium copper oxygen solution is used as the precursor solution, combined with the dipping method or spin coating method, on the lanthanum aluminate or strontium titanate single crystal substrate, or on the NiW alloy strip with a buffer layer. Gadolinium-barium-copper-oxygen gel film, followed by drying the obtained gel film under air at a temperature of 80-100°C for 5-20 minutes to obtain a dry film of gadolinium-barium-copper-oxygen;
[0037] 3) Film pretreatment:
[0038] Put the obtained dry film of gadolinium barium copper oxide into the quartz tube sintering furnace for pretreatment. Ventilation, first through dry O 2 After 30 minutes, the temperature in the furnace was raised to 100°C at any rate, and then the atmosphere was switched to humid O with a water vapor pressure of 4-8kPa. 2 gas, then raise the furnace temperature to 200°C at a rate of 10°C / min, then raise the furn...
Embodiment 1
[0046] This embodiment provides a method for preparing a gadolinium-barium-copper-oxygen high-temperature superconducting thin film by a chemical solution method, and the specific operation steps are as follows:
[0047] 1) prepare fluorine-containing gadolinium barium copper oxygen solution;
[0048] 1.1 Dissolve gadolinium acetate (raw material A) in methanol (solvent A), then add diethylenetriamine (complexing agent A), and control the molar ratio of gadolinium acetate:diethylenetriamine:methanol to 1:1.5:15 , to form solution A after stirring and dissolving;
[0049] 1.2 Dissolve barium acetate (raw material B) in aqueous trifluoroacetic acid (complexing agent B) (in order to prevent volatilization of trifluoroacetic acid, add water to trifluoroacetic acid, the volume ratio of trifluoroacetic acid to water is 1:1 ), after stirring and clarification, dry at 50°C to obtain a white solid B; control the molar ratio of barium acetate: trifluoroacetic acid to be 1:2;
[0050] ...
Embodiment 2
[0060] This embodiment provides a method for preparing a gadolinium-barium-copper-oxygen high-temperature superconducting thin film by a chemical solution method, and the specific operation steps are as follows:
[0061] 1) prepare fluorine-containing gadolinium barium copper oxygen solution;
[0062] 1.1 Dissolve gadolinium acetate (raw material A) in acrylic acid (solvent A) first, then add diethanolamine (complexing agent A), control the molar ratio of gadolinium acetate:diethanolamine:acrylic acid to 1:1.5:10, stir and dissolve Form solution A;
[0063] 1.2 Dissolve barium hydroxide (raw material B) in aqueous trifluoroacetic acid (complexing agent B) (in order to prevent volatilization of trifluoroacetic acid, add water to trifluoroacetic acid, the volume ratio of trifluoroacetic acid to water is 1:1 ), after being stirred and clarified, a white solid B was obtained by drying at 90°C, and then α-methacrylic acid (solvent B) was added to the white solid B to dilute, and aft...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com