Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro electro mechanical system (MEMS) device and manufacture method of MEMS device

A manufacturing method and device technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, electrical components, etc., can solve the problem of low device reliability and MEMS devices not working properly and other problems to achieve the effect of improving reliability

Active Publication Date: 2012-08-01
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF6 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] In practice, it is found that the MEMS devices made by existing methods cannot work normally, and the reliability of the devices is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro electro mechanical system (MEMS) device and manufacture method of MEMS device
  • Micro electro mechanical system (MEMS) device and manufacture method of MEMS device
  • Micro electro mechanical system (MEMS) device and manufacture method of MEMS device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] The MEMS device made by the existing method cannot work normally, and the reliability of the device is not high. After research by the inventor, it is found that when the through hole is closed above the MEMS active electrode to form a closed cavity, a part of the insulating layer will be deposited on the surface of the MEMS active electrode, which will affect the performance of the MEMS active electrode. It will affect the working performance of the MEMS device, thus affecting the reliability of the device.

[0060] Specifically, combine image 3 Since the opening in the interlayer dielectric layer 103 exposes the MEMS active electrode below, when the insulating layer is formed by the deposition process, the insulating layer may reach the MEMS active electrode 102 through the opening and the cavity and attached to the surface of the MEMS active electrode 102.

[0061] The inventors also found that the existing MEMS movable electrode 102 is susceptible to interference...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a micro electro mechanical system (MEMS) device and a manufacture method of the MEMS device. The device comprises a first interlayer dielectric layer, a cavity, an opening combination, an MEMS movable electrode, a second interlayer dielectric layer, a third opening and a third interlayer dielectric layer, wherein the first interlayer dielectric layer is positioned on a semiconductor substrate, the cavity is positioned in the first interlayer dielectric layer, the opening combination is positioned in the first interlayer dielectric layer arranged above the cavity, is communicated with the opening combination and comprises a first opening and a second opening, the side walls of the first opening and the second opening are not aligned, a lug boss is formed between the first opening and the second opening and is exposed out by the second opening, the MEMS movable electrode is suspended and placed in the cavity and can move relative to the cavity, the second interlayer dielectric layer is positioned on the first interlayer dielectric layer, the third opening is positioned in the second interlayer dielectric layer and is communicated with the opening combination, in addition, the position of the third opening does not exceed the position of the lug boss, and the third opening is fully filled by the third interlayer dielectric layer. The obtained MEMS device can normally work, and the reliability of the MEMS device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a MEMS device and a manufacturing method thereof. Background technique [0002] MEMS (Microelectromechanical System) technology refers to the technology of designing, processing, manufacturing, measuring and controlling micro / nano (micro / nanotechnology) materials. MEMS is a micro system that integrates mechanical components, optical systems, drive components, and electronic control systems into an integral unit. MEMS technology is used in position sensors, rotating devices or inertial sensors, such as acceleration sensors, gyroscopes and sound sensors. [0003] A MEMS device manufactured by MEMS technology usually has a cavity and a MEMS active electrode located in the cavity and capable of relative movement with the cavity. The two most critical steps in the manufacturing process of MEMS devices are making the cavity and sealing the cavity. [0004] Specifically, pleas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00
CPCB81C1/00B81B3/00B81C1/00293B81C2203/0145
Inventor 陈晓军吴秉寰黄河
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com