Wiring structure of double-layer information technology outsourcing (ITO)

A wiring structure, double-layer technology, applied in the field of double-layer ITO wiring structure, can solve the problem of unstable detection, achieve the effects of tight distribution, reduce power supply noise interference, and improve detection sensitivity and linearity

Inactive Publication Date: 2012-08-01
SUZHOU PIXCIR MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem mainly solved by the present invention is to provide a double-layer ITO wiring structure, which can improve the problem of unstable detection of the traditional capacitive touch structure and improve the sensing ability of the ITO layer

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  • Wiring structure of double-layer information technology outsourcing (ITO)
  • Wiring structure of double-layer information technology outsourcing (ITO)
  • Wiring structure of double-layer information technology outsourcing (ITO)

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Embodiment Construction

[0012] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0013] see figure 1 , the present invention relates to a double-layer ITO (indium tin oxide) wiring structure, the ITO layer 1 is composed of a plurality of touch electrodes 10, and each layer of ITO is respectively provided with a first touch electrode 11 and a second touch electrode. A kind of touch electrode 12. The shape of the first type of touch electrode 11 is composed of two symmetrical arrangements of rectangular waves with equal amplitude, equal width, and opposite directions, and a first gap 111 is formed in the middle; the shape of the second type of touch electrode 12 is composed of Two equal-amplitude, equal-width, and opposite-di...

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Abstract

The invention discloses a wiring structure of a double-layer information technology outsourcing (ITO). A first touch electrode and a second touch electrode are arranged on each layer of the ITO respectively, the shape of the first touch electrode is composed of two rectangular waves which are provided with equal range, equal width and adverse directions and are symmetrically arranged, and a first gap is formed between the two rectangular waves. The shape of the second touch electrode is composed of two rectangular waves which are provided with equal range, equal width and adverse directions and are symmetrically connected in a sealed mode, a second gap is formed between the two rectangular waves, and the width of trough of the rectangular wave at the most marginal position of the second touch electrode is half of that of the rectangular wave. By means of the mode, the wiring structure enables distribution of electrodes on an ITO layer to be tight, obviously improves sense sensitivity and linearity of the ITO layer, and effectively reduces noise jamming of a power supply.

Description

[0001] technical field [0002] The invention relates to an ITO wiring structure, in particular to a double-layer ITO wiring structure. Background technique [0003] The so-called ITO (indium tin oxide) is a key material used in the production of liquid crystal displays. At present, it is widely used in the fields of instrumentation, computers, electronic watches, game consoles and household appliances. In recent years, the hot capacitive touch screen on the market also uses ITO to complete the touch detection action, and the ITO wiring on the capacitive touch screen is generally double-layered. The main principle is: using the electric field of the human body, when the user touches, the surface moves Or the mutual capacitance (also called coupling capacitance) of the sensing unit at the intersection of columns will change, and the specific position of the touch point can be finally detected according to the above change. [0004] The common double-layer ITO structure is a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/044
Inventor 张开立
Owner SUZHOU PIXCIR MICROELECTRONICS
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