N-Ge-Te phase change memory material used for high temperature environment and preparation method thereof
A phase-change storage, high-temperature environment technology, applied in the field of N-Ge-Te phase-change storage materials and preparation, can solve the problems of large density changes, unsatisfactory data retention, device failure, etc.
Active Publication Date: 2012-08-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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However, from the practical point of view, it does not significantly help the improvement of data retention
[0005] GeTe is also a phase change material with excellent performance. Studies have proved that the crystallization temperature of this material is higher than that of Ge 2 Sb 2 Te 5 , the difference between high and low resistance before and after the phase change is large, and the speed of current operation can reach several ns, but its data retention still cannot meet the requirements of the industrial and military aerospace fields (about 90°C). In addition, the density change before and after crystallization is relatively large large, the device is at risk of failure when operating
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[0025] Below through specific embodiment, further clarifies substantive characteristic and remarkable progress of the present invention, but the present invention is by no means limited to described embodiment.
[0026] A kind of N-Ge-Te phase-change storage material used in high-temperature environment proposed by the present invention, its general composition formula is N x (Ge y Te 1-y ) 1-x , wherein the N content cannot exceed 15%, and the ratio of Ge and Te is greater than 1, that is to say, the value range of x and y is preferably recommended to be 02 method, by controlling the power of the two target sites and the Ar 2 / N 2 The flow ratio can realize the adjustment of the components, and it can also use the well-made Ge y Te 1-y Alloy Target Single Target Sputtering and Simultaneous Adjustment of Ar 2 / N 2 These methods can be used to prepare phase change materials with various components recommended in the general formula.
[0027]This example prepares N by us...
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Abstract
The invention discloses an N-Ge-Te phase change film material used for high temperature environment and a preparation method thereof, a component general formula of the material is Nx(GeyTe1-y)1-x, wherein x is larger than 0 and is equal to or smaller than 0.15, y is larger than 0.5 and is equal to or smaller than 0.9, and reversible phase changes can be realized under the action of external electric pulses. The material can be prepared by adopting a multi-target co-sputtering method in a process of magnetron sputtering. According to the invention, based on the problem of phase change material amorphous, material crystallization temperature and crystallization activation energy are greatly improved on the premise of no loss of reversible phase change abilities by adjusting a doped-N content and a ratio of Ge and Te. Nx(GeyTe1-y)1-x has a higher crystallization temperature, better thermal stability and better data retention compared with a traditional material Ge2Sb2Te5, which lays a solid foundation for phase change memory applications in the field of aerospace.
Description
technical field [0001] The invention relates to a phase-change storage material and a preparation method in the field of microelectronic technology, more precisely, an N-Ge-Te phase-change storage material and a preparation method used in a high-temperature environment. Background technique [0002] Phase-change storage technology is a new concept storage technology that has only emerged in recent years. It uses phase-change thin film materials as storage media to achieve data storage. It has broad application prospects and is currently a hot spot in memory research. Hope to become the next generation of mainstream memory. As the core part of phase-change memory (PCRAM), the research and development of phase-change thin film materials plays a vital role in the research and development of PCRAM. The improvement of the performance of the phase change material is the key technology to improve the performance of the whole PCRAM device. [0003] In phase change memory, Ge 2 Sb...
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IPC IPC(8): H01L45/00
Inventor 彭程吴良才饶峰宋志棠周夕淋朱敏刘波
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI