Wet-method etching liquid for making phase change storage and its wet-method etching process
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A wet etching and storage technology, applied in the field of microelectronics technology, can solve the problems of complexity and high cost of the manufacturing process
Active Publication Date: 2009-07-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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[0004] The purpose of the present invention is to overcome the shortcoming of the high cost and the complexity of the manufacturing process of the existing phase change memory, to find a wet etching solution with superior performance and its wet etching process, so as to control Time to make nanostructured phase-change memory
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Embodiment 1
[0030] (1) Configure 50 grams of wet etchant:
[0031] Take 10 grams of hydrochloric acid solution, add 3 grams of 30% H 2 o 2 solution, add 1 gram of ethylenediaminetetraacetic acid (EDTA), 0.5 gram of fatty alcohol polyoxyethylene ether (JFC), and add deionized water to the rest.
[0032] (2) Prepare samples for wet etching:
[0033] The silicon oxide wafer is ultrasonically cleaned with acetone, cleaned in the cleaning solution of ammonia water plus hydrogen peroxide, hydrochloric acid plus hydrogen peroxide, respectively, and blown dry with nitrogen after cleaning. Sputter a 30nm metal thin film Ti on a clean silicon oxide wafer with a magnetron sputtering table, then sputter a 100nm metal thin film Pt as the bottom electrode, and finally sputter a 200nm phase change material Ge 2 Sb 2 Te 5 . Coat the sputtered sample with photoresist, place it in a constant temperature box for 35 minutes, then expose it with a photolithography machine for 7 seconds, soak it in chlor...
Embodiment 2
[0038] (1) Configure 50 grams of etchant
[0039] Take 10 grams of tartaric acid, dissolve it in 30 grams of deionized water, add 1 gram of H 2 o 2 , add 1 gram of ethylenediaminetetraacetic acid (EDTA), add 1 gram of fatty alcohol polyoxyethylene ether (JFC), and add deionized water to the rest.
[0040] (2) Prepare etching samples.
[0041] Ultrasonic the silicon oxide wafer with acetone, wash it in the cleaning solution of ammonia water plus hydrogen peroxide, hydrochloric acid plus hydrogen peroxide respectively, and dry it with nitrogen after cleaning. Sputter a 50nm metal thin film Ti on a clean silicon oxide wafer with a magnetron sputtering table, then sputter a 100nm metal thin film Pt as the bottom electrode, and finally sputter a 300nm phase change material Ge 2 Sb 2 Te 5 . Coat the sputtered sample with photoresist, place it in a constant temperature box for 30 minutes, then expose it with a photolithography machine for 7 seconds, soak it in chlorobenzene for 5...
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Abstract
The invention relates to a wet etching solution for making a phase-change random access memory and its wet etching process. The etching solution is composed of 1-30% acid solution, 0.5%-10% oxidant, The mixture is 0.05%-10%, the surfactant is 0.1-5% (both are wt%), and the balance is deionized water. The wet etching process steps are: (1) cleaning the silicon oxide wafer, sequentially depositing Ti or TiN, Pt or Au, and a phase change material film; (2) patterning the phase change film by photolithography; (3) depositing metal Pt or Au; (4) Remove the metal Pt or Au outside the exposure by a lift-off process; (5) Etch the phase change material with an etching solution; (6) Deposit SiO2 to form a device structure. This process makes full use of the forward and side etching of the etching solution, and under the condition of effectively controlling the etching rate, the nano phase change memory structure is produced by the micron processing technology; after the production, the ion has no pollution to the device, and it is easy to clean and process And waste liquid treatment cost is low.
Description
technical field [0001] The invention relates to a wet etching agent used in making a phase-change memory and a wet etching process thereof, which belongs to the microelectronic technology in microelectronics. Background technique [0002] Compared with the current dynamic random access memory (DRAM) and flash memory (FLASH), phase-change thin film material random access memory (PRAM) has obvious advantages: it is small in size, low in driving voltage, low in power consumption, fast in read and write speed, and non-volatile . Phase change memory is not only a non-volatile memory, but it is also possible to make multi-level storage, and it is suitable for ultra-low temperature and high temperature environments, and is resistant to radiation and vibration. Therefore, it will not only be widely used in daily portable electronic products, but also in aerospace There are huge potential applications in other fields. In particular, its high speed and non-volatility just make up fo...
Claims
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