High-electrostriction sodium-bismuth-titanate-base lead-free piezoelectric material and preparation method thereof

A sodium bismuth titanate-based, electrostrained technology, applied in the field of functional ceramics, can solve problems such as narrow operating temperature range

Inactive Publication Date: 2012-08-15
SHANGHAI NORMAL UNIVERSITY
View PDF1 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in general, the overall performance of the current lead-free system is still far behind that of traditional PZT-based materials, such as th...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-electrostriction sodium-bismuth-titanate-base lead-free piezoelectric material and preparation method thereof
  • High-electrostriction sodium-bismuth-titanate-base lead-free piezoelectric material and preparation method thereof
  • High-electrostriction sodium-bismuth-titanate-base lead-free piezoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Use high purity Bi 2 o 3 , Na 2 CO 3 , BaCO 3 ,TiO 2 and SrCO 3 As raw material, according to the chemical formula 0.915Bi 0.5 Na 0.5 TiO 3 -0.065BaTiO 3 -0.02SrTiO 3 carry out ingredients;

[0028] Use absolute ethanol as the medium, use a planetary mill to wet grind for 6 hours, dry at 90°C to obtain a dry powder, pre-burn the dried raw material in air at 850°C for 2 hours, and grind to obtain a solid solution raw material;

[0029] Use anhydrous ethanol as the medium to carry out secondary wet grinding for 6 hours, and obtain finely ground raw materials after drying, and use dry pressing method for molding;

[0030] Sinter the molded piece in air at 1200°C for 2 hours to obtain a dense BNBST ceramic piece.

Embodiment 2

[0032] The steps of this embodiment are basically the same as those of Embodiment 1, the difference is that according to the chemical formula 0.855Bi 0.5 Na 0.5 TiO 3 -0.065BaTiO 3 -0.08SrTiO 3 Proceed to the ingredients.

Embodiment 3

[0034] The steps of this embodiment are basically the same as those of Embodiment 1, except that according to the chemical formula 0.835Bi 0.5 Na 0.5 TiO 3 -0.065BaTiO 3 -0.10SrTiO 3 Proceed to the ingredients.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Peak temperatureaaaaaaaaaa
Remanent polarizationaaaaaaaaaa
Coercive fieldaaaaaaaaaa
Login to view more

Abstract

The invention discloses a high-electrostriction sodium-bismuth-titanate-base lead-free piezoelectric material. The invention is characterized in that the chemical composition is (0.935-x)Bi0.5Na0.5TiO3-0.065BaTiO3-xSrTiO3, wherein 0<=x<=0.30. On the basis of a binary morphotropic phase boundary (MPB) component solid solution 0.935Bi0.5Na0.5TiO3-0.065BaTiO3, SrTiO3 is introduced to prepare a ternary system solid solution, thereby preparing a high-electromechanical-responsiveness lead-free system. Compared with the existing lead-free system, the invention can disclose the MPB component of the ternary solid solution, obtain the high-electrostriction system, can acquire high strain capacity in a small electric field, and is prospected to be applied to novel environment-friendly solid state drives.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C04B35/475C04B35/622
Inventor 王飞飞石旺舟徐敏金成超姚其容
Owner SHANGHAI NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products