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Thin-film transistor, display apparatus and electronic apparatus

A technology for thin film transistors and display devices, applied in transistors, circuits, electrical components, etc., can solve problems such as difficulty in eliminating the difference in component characteristics and insufficient processing, and achieve the effect of reducing the amount of difference, stabilizing the transmission path, and improving performance.

Active Publication Date: 2012-08-15
JOLED INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, the approach to the single crystal approach is not sufficient
Therefore, it is difficult to eliminate the difference in element characteristics

Method used

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  • Thin-film transistor, display apparatus and electronic apparatus
  • Thin-film transistor, display apparatus and electronic apparatus
  • Thin-film transistor, display apparatus and electronic apparatus

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Embodiment approach

[0044] Configuration of Thin Film Transistor 1

[0045] figure 1 is a diagram showing a model of the cross-sectional structure of the thin film transistor 1 according to the embodiment of the present invention. The thin film transistor 1 is a so-called bottom-gate TFT or a TFT having a so-called inverted staggered structure. The thin film transistor 1 includes a channel layer 14 made of polycrystalline oxide semiconductor. On a substrate 11 included in the thin film transistor 1 , a gate 12 , a gate insulating film 13 , a channel layer 14 , and a source 15A / drain 15B are sequentially formed. The substrate 11 is a substrate made of glass or the like. A protective film 16 is formed over the entire substrate 11 on the source electrode 15A and the drain electrode 15B.

[0046] The gate 12 of the thin film transistor 1 is an electrode for controlling the carrier density in the channel layer 14 according to a voltage applied to the gate 12 as a gate voltage. More specifically, ...

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Abstract

Disclosed herein is a thin-film transistor having a gate electrode; a source electrode and a drain electrode which form a source / drain-electrode pair; and a channel layer which is provided between the gate electrode and the source / drain-electrode pair, includes a poly-crystal oxide semiconductor material and has a film thickness smaller than the average diameter of crystal grains of the poly-crystal oxide semiconductor material. The thin-film transistor has a high mobility of carriers and is capable of reducing the number of variations of the device characteristic and can imporve the performance of a display apparatus including the thin-film transistor as well as the performance of an electronic apparatus employing the display apparatus.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to and claims priority from Japanese Patent Application JP2011-027293 filed in the Japan Patent Office on Feb. 10, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a thin film transistor using a polycrystalline oxide semiconductor in its channel layer, a display device including the thin film transistor, and an electronic device using the display device. Background technique [0004] In recent years, display devices are designed to have large sizes and high frame rates. Also, with the development of 3D display devices, it is absolutely necessary to increase the functions of display elements and their peripheral elements and improve the performance of these elements. Currently, hydrogenated amorphous silicon (a-Si:H) is used to obtain TFTs (Thin Film Transistors), which are more stable than T...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/04H01L29/24
CPCH01L29/7869H01L29/78696
Inventor 横关弥树博
Owner JOLED INC
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