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Thin film transistor, display device and electronic equipment

A technology of thin film transistors and crystal grains, which is applied in the direction of transistors, circuits, electrical components, etc., can solve problems such as difficult to eliminate differences in component characteristics and insufficient processing, and achieve the effects of reducing the amount of differences, stabilizing the transmission path, and improving performance

Active Publication Date: 2016-11-23
JOLED INC
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Thus, the approach to the single crystal approach is not sufficient
Therefore, it is difficult to eliminate the difference in element characteristics

Method used

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  • Thin film transistor, display device and electronic equipment
  • Thin film transistor, display device and electronic equipment
  • Thin film transistor, display device and electronic equipment

Examples

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Embodiment approach

[0044] Configuration of Thin Film Transistor 1

[0045] figure 1 is a diagram showing a model of the cross-sectional structure of the thin film transistor 1 according to the embodiment of the present invention. The thin film transistor 1 is a so-called bottom-gate TFT or a TFT having a so-called inverted staggered structure. The thin film transistor 1 includes a channel layer 14 made of polycrystalline oxide semiconductor. On a substrate 11 included in the thin film transistor 1 , a gate 12 , a gate insulating film 13 , a channel layer 14 , and a source 15A / drain 15B are sequentially formed. The substrate 11 is a substrate made of glass or the like. A protective film 16 is formed over the entire substrate 11 on the source electrode 15A and the drain electrode 15B.

[0046] The gate 12 of the thin film transistor 1 is an electrode for controlling the carrier density in the channel layer 14 according to a voltage applied to the gate 12 as a gate voltage. More specifically, ...

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Abstract

The invention discloses a thin film transistor, a display device including the thin film transistor and an electronic device using the display device. The thin film transistor includes: a gate; a source and a drain forming the source a drain pair; and a channel layer disposed between the gate and the source-drain pair, the channel layer includes a polycrystalline oxide semiconductor material, and the film thickness of the channel layer is smaller than that of the polycrystalline oxide semiconductor The average diameter of the grains of a material. The thin film transistor of the present invention has high carrier mobility and can reduce the difference in element characteristics, so the performance of the display device using the thin film transistor and the electronic equipment using the display device can be improved.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to and claims priority from Japanese Patent Application JP2011-027293 filed in the Japan Patent Office on Feb. 10, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a thin film transistor using a polycrystalline oxide semiconductor in its channel layer, a display device including the thin film transistor, and an electronic device using the display device. Background technique [0004] In recent years, display devices are designed to have large sizes and high frame rates. Also, with the development of 3D display devices, it is absolutely necessary to increase the functions of display elements and their peripheral elements and improve the performance of these elements. Currently, hydrogenated amorphous silicon (a-Si:H) is used to obtain TFTs (Thin Film Transistors), which are more stable than T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/04H01L29/24
CPCH01L29/7869H01L29/78696
Inventor 横关弥树博
Owner JOLED INC
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