Manufacturing method of led electrode using ito/zno based composite film as p electrode
A fabrication method and p-electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to form an ITO/ZnO-based composite film electrode area, unsatisfactory, fast corrosion rate, etc., to reduce material costs, flexible High performance and simple preparation process
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Embodiment 1
[0039] See attached Figure 1~12 , the preparation method of the present invention comprises the following steps:
[0040] 1) if figure 1 Shown: conventional acid cleaning, organic cleaning, and water cleaning are performed on the substrate 1;
[0041] 2) if figure 2 As shown: put the cleaned substrate 1 into the ITO evaporation table, and evaporate a 100nm thick ITO conductive film 2 at a temperature of 350°C and oxygen;
[0042] 3) if image 3 As shown: uniformly coat photoresist 8 on the substrate 1 on which the ITO conductive film 2 is deposited, perform photolithography, and etch out the window 9 of the ITO conductive film;
[0043] 4) if Figure 4 As shown: the ITO conductive film 2 is corroded by concentrated hydrochloric acid with a mass concentration of 37%, the ITO conductive film 2 exposed by the window 9 is corroded by the etching solution, and the n-electrode region 7 is exposed, and the ITO conductive film 2 outside the window 9 is covered by the photoresis...
Embodiment 2
[0052] See attached Figure 1~12 , the preparation method of the present invention comprises the following steps:
[0053] 1) if figure 1 Shown: conventional organic cleaning and water cleaning are performed on the substrate 1;
[0054] 2) if figure 2 As shown: put the cleaned substrate 1 into the ITO evaporation table, and evaporate a 20nm thick ITO conductive film 2 at a temperature of 250°C and oxygen;
[0055] 3) if image 3 As shown: uniformly coat photoresist 8 on the substrate 1 on which the ITO conductive film 2 is deposited, perform photolithography, and etch out the window 9 of the ITO conductive film;
[0056] 4) if Figure 4 As shown: the ITO conductive film 2 is corroded by concentrated hydrochloric acid with a mass concentration of 37%, the ITO conductive film 2 exposed by the window 9 is corroded by the etching solution, and the n-electrode region 7 is exposed, and the ITO conductive film 2 outside the window 9 is covered by the photoresist 8 protection, ...
Embodiment 3
[0065] See attached Figure 1~12 , which plots the fabrication process of one embodiment of the invention.
[0066] 1) if figure 1 Shown: conventional acid cleaning and organic cleaning are performed on the substrate 1;
[0067] 2) if figure 2 As shown: put the cleaned substrate 1 into the ITO evaporation table, and evaporate a 50nm thick ITO conductive film 2 at a temperature of 300°C and oxygen;
[0068] 3) if image 3 As shown: uniformly coat photoresist 8 on the substrate 1 on which the ITO conductive film 2 is deposited, perform photolithography, and etch out the window 9 of the ITO conductive film;
[0069] 4) if Figure 4 As shown: sulfuric acid with a mass concentration of 15% is used to etch the ITO conductive film 2, the ITO conductive film 2 exposed by the window 9 is corroded by the etching solution, and the n-electrode region 7 is exposed, and the ITO conductive film 2 outside the window 9 is covered by the photoresist 8 Protected from being corroded by the...
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