Phase change memory unit and forming method thereof

A phase-change storage and phase-change material technology, applied in the field of phase-change storage units and their formation, can solve the problems of increased power consumption of phase-change storage units, loss of heat from the upper electrode, etc., and achieves low cost, reduced voids, and guaranteed The effect of stability

Active Publication Date: 2012-08-15
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0006] The problem to be solved by the present invention is to provide a phase-change memory unit and its forming method. By introducing a nitrided phase-change material layer, it solves the problem that the loss of heat from the upper electrode (second electrode) causes the phase-change memory unit to work. The problem of increased consumption

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  • Phase change memory unit and forming method thereof
  • Phase change memory unit and forming method thereof
  • Phase change memory unit and forming method thereof

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[0030] In order to make the above objects, features and advantages of the present invention more obvious and comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0031] see figure 1 , the basic structure of the phase-change memory cell in the prior art is composed of a first isolation layer 101a, a second isolation layer 101b, a first electrode 102, a second electrode 103 and a phase-change material layer 104, wherein the phase-change material layer 104 is located at the second Between the first electrode 102 and the second electrode 103 , inside the insulating isolation layer 104 , is in contact with the heating resistor extending from the first electrode 102 . The severe heat generated by current injection can cause the phase change material to undergo a phase change. By controlling the injected current, voltage and operating time, the crystalline and amorphous states of the phas...

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Abstract

The invention provides a phase change memory unit comprising a phase change material layer and a nitridation phase change material layer positioned on the surface of the phase change material layer. The invention also provides a forming method of the phase change memory unit. According to the forming method, the phase change material layer is provided, and the nitridation phase change material layer is formed on the surface of the phase change material layer. According to the technical scheme provided by the invention, the heat consumption in the work of the phase change memory unit can be reduced effectively, the work stability of the phase change memory unit is improved, the process is simple and practicable, and the cost is relatively low.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a phase-change memory unit and a forming method thereof. Background technique [0002] A phase change memory cell is a structure containing a layer of phase change material, typically a chalcogenide alloy. With concentrated heating in the form of electrical pulses, phase-change materials can rapidly transition from an ordered crystalline state (low electrical resistance) to a disordered amorphous state (high electrical resistance). The repeated transition from crystalline to amorphous state is triggered by a melting and rapid cooling mechanism, or a process known as recrystallization. Binary data can be stored using the difference in resistivity between the crystalline and amorphous states of phase-change materials: the high-resistance amorphous state is used to represent a binary 0; the low-resistance crystalline state represents a 1. The latest phase-change memory c...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 任万春宋志棠刘波
Owner SEMICON MFG INT (SHANGHAI) CORP
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