Organic field-effect-transistor structure and preparation method thereof
A transistor and organic field technology, applied in the field of organic electronics, can solve the problems of large electrode size and limited graphic shape, and achieve the effects of increasing injection current, reducing preparation temperature, and improving performance
Inactive Publication Date: 2012-09-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
Due to the difficulty of preparing the hollow mask itself and the relatively large gap between the hollow mask and the substrate during the preparation of the electrode, this technology makes the electrode size larger and the shape of the pattern is relatively limited. Used to prepare large-scale circuits
Method used
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preparation example Construction
[0053] The present invention also provides a method for preparing the organic transistor structure, the preparation process is shown in Figure 2, including the following steps:
[0054] Such as diagram 2-1 As shown, a gate electrode 202 is prepared on an insulating substrate 201;
[0055] Such as Figure 2-2 As shown, a gate dielectric layer 203 is deposited on the surface of the gate electrode 202;
[0056] Such as Figure 2-3 As shown, an active layer 204 is deposited on the surface of the gate dielectric layer 203;
[0057] Such as Figure 2-4 As shown, a patterned protective layer 205 is prepared on the surface of the active layer 204;
[0058] Such as Figure 2-5 As shown, the source and drain electrode metal films 206 are deposited on the surface of the sample on which the protective layer 205 has been prepared, and the device is completed.
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The invention discloses an organic field-effect-transistor structure and a preparation method thereof. The transistor structure comprises an insulating substrate, an active layer, a gate dielectric, source and drain electrodes and a gate electrode. The transistor structure is a bottom-gate-top-contact type structure, and the source and drain electrodes are top-contact type electrodes and are patterned by water-soluble photoresist. The organic field-effect-transistor structure provided by the invention can directly form patterned top-contact type source and drain electrodes, thus being beneficial to the improvement of carrier injection. Meanwhile, the invention provides a preparation method of the transistor structure. The method avoids the damage to an organic semiconductor by the common photoresist, is beneficial to the improvement of the performance of an organic field-effect transistor and can be used for preparing a large-scale organic circuit with high resolution.
Description
technical field [0001] The invention relates to the technical field of organic electronics, in particular to an organic field effect transistor structure and a preparation method thereof. Background technique [0002] With the deepening of information technology, electronic products have entered every aspect of people's life and work. In daily life, there is an increasing demand for low-cost, flexible, low-weight, and portable electronic products. Traditional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements in terms of technology and cost, so these characteristics can be achieved Microelectronics technology based on organic semiconductor materials has received more and more attention under this trend. [0003] Organic field effect transistors are the basic components of organic circuits, and their performance plays a decisive role in the performance of the circuit. In addition to the influence of the materials used on...
Claims
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IPC IPC(8): H01L51/10H01L51/40
Inventor 商立伟姬濯宇刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI