Device and method for removing quartz from monocrystalline silicon pot material

Abstract

The invention discloses a device for removing quartz from a monocrystalline silicon pot material, which is characterized in that a heater and a temperature control displayer are respectively arranged on the inner wall and the outer wall of a heat preservation cylinder; a reaction kettle is placed on a bottom bracing on the inner bottom surface of the heat preservation cylinder; the reaction kettle and the heater are distributed concentrically; the heat preservation cylinder is equipped with an upper cover plate; and the reaction kettle is equipped with a reaction kettle cover plate. The invention additionally discloses a method for removing the quartz from the monocrystalline silicon pot material by using a thermostatic waterbath method, which comprises the steps that the device is utilized; tap water is filled into the heat preservation cylinder; then the silicon raw material from which the quartz is to be removed is loaded into the well-placed reaction kettle; afterwards, hydrofluoric acid is added into the reaction kettle, and the reaction kettle cover plate and the upper cover plate are well covered and closed; and related working parameters are started and set through the temperature control displayer, and the quartz is removed from the silicon raw material after the reaction requirements are met. By adopting the device and the method, the reaction speed of the hydrofluoric acid and the pot material is remarkably increased at room temperature, the cycle is shortened and the efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon manufacture, and relates to a device for removing quartz in a single crystal silicon crucible bottom material, and also relates to a method for removing quartz in a single crystal silicon crucible bottom material by using a constant temperature water bath method. Background technique [0002] At present, when dealing with the Czochralski single crystal silicon crucible bottom material, hydrofluoric acid is used to soak at room temperature to remove the quartz adhered to the crucible bottom material, so that it can meet the purity requirements of solar-grade silicon single crystal raw materials, so that this part can be effectively used. Bottom material. [0003] Under the existing technical conditions, in the soaking process using hydrofluoric acid, due to the low room temperature, the reaction speed between hydrofluoric acid and the crucible bottom material is too slow, the reacti...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a device for removing quartz in the bottom material of the single crystal silicon crucible, which solves the problem of slow reaction speed, long cycle and low efficiency of hydrofluoric acid and quartz in the bottom material of the crucible existing in the prior art at room temperature. question

[0005] Another object of the present invention is to provide a method for removing quartz in the bottom material of a single crystal silicon crucible by using a constant temperature water bath method, which solves the problems in the prior art that the ambient temperature is too low, the chemical reaction is slow, and the reaction cycle is long

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