Seeding method and system for growing sapphire by using kyropoulos method
A technology of sapphire and Kyropoulos, which is applied in the direction of seed crystal remaining in the molten liquid, single crystal growth, and crystal growth during the growth period of use, which can solve problems such as blurred observation windows, and achieve the effect of improving the success rate and prolonging the use time
Inactive Publication Date: 2015-02-04
JIANGSU CEC ZHENHUA CRYSTAL TECH
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Problems solved by technology
[0006] The technical problem to be solved by the present invention is to provide a seeding method for sapphire grown by the Kyropoulos method, which can solve the problem of blurred observation windows during the seeding process of the sapphire grown by the Kyropoulos method
[0007] In addition, the present invention also provides a seeding system for sapphire grown by the kyropoulos method, which can solve the problem of blurred observation windows during the seeding process of sapphire grown by the kyropoulos method
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Embodiment 1
[0034] see figure 1 , the present invention discloses a method for seeding sapphire grown by the Kyropoulos method. Electrons are generated through an electron emitter inside the observation window, and after being accelerated by an accelerating voltage, a high-energy electron beam is obtained and hits the atoms or molecules volatilized from the inside of the furnace body. , to make it into ions, and then add an electric field or magnetic field of a specific strength on both sides of the observation window, through the action of the electric field or magnetic field, change the direction of movement of these charged particles, making them adsorb on the inner wall of the observation window, so as to protect the observation window the goal of.
[0035] see figure 2 , the seeding method of kyropoulos growth sapphire of the present invention comprises the steps:
[0036] [Step S1 ] Electrons are generated by the electron emitter inside the observation window.
[0037] [Step S2]...
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The invention discloses a seeding method and system for growing sapphire by using a kyropoulos method. The method comprises the following steps of: generating electrons inside an observation window through an electronic transmitter; accelerating the generated electrons by acceleration voltage to obtain a high-energy electron beam, and hitting atoms or molecules volatilizing from the interior of a furnace body with the obtained high-energy electron beam, so as to form charged particles; and applying an electric field or magnetic field with specific intensity to two sides of the observation window, and changing the movement direction of the charged particles under the action of the electric field or the magnetic field so that the charged particles are absorbed on the inner wall of the observation window, so as to protect the observation window. The seeding method and the system for growing the sapphire by using the kyropoulos method, provided by the invention, are capable of changing the movement direction of the charged particles by applying the electric field or the magnetic field with the specific intensity to the two sides of the observation window so that the charged particles are absorbed on the inner wall of the observation window before arriving at the observation window; and therefore, the technical problem of fuzziness of the observation window is solved; and simultaneously, the method and the system are capable of providing enough time guarantee for a seeding process.
Description
technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a method for growing sapphire, in particular to a seeding method for growing sapphire by the Kyropoulos method; meanwhile, the invention also relates to a seeding system for growing sapphire by the Kyropoulos method. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045°C), it is often used as a material for optoelectronic components. [0003] There are many methods for the growth of sapphire crystal materials, mainly including: Kyropoulos method (Kyropolos method, Ky method for short), guided mode method (ed...
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IPC IPC(8): C30B17/00C30B29/20
Inventor 帕维尔·斯万诺夫维塔利·塔塔琴科陈文渊刘一凡孙大伟
Owner JIANGSU CEC ZHENHUA CRYSTAL TECH