Silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor

A transistor and body contact technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that the source and drain cannot be interchanged, the floating body effect cannot be effectively suppressed, and the source and drain are asymmetrical.

Inactive Publication Date: 2012-09-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The T-type gate and H-type gate technologies in the prior art cannot effectively suppress the floating body effect due to the existence of the body resistance of the P-type Si region, and the wider the channel, the greater the body resistance and the more significant the floating body effect
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Method used

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  • Silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor
  • Silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor
  • Silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor

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Embodiment Construction

[0023] Embodiments of the invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0024] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and...

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Abstract

The invention provides a silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor which comprises a device active region which has a continuous shape, a grid, a source region, a drain region and a body contacting active region, wherein the device active region is formed in an SOI layer of an SOI substrate; the grid extends by crossing the device active region; the source region and the drain region are respectively positioned in the device active region at the two sides of the grid; and the body contacting active region is independent with the device active region, and electrically connected with a channel region below the grid without being isolated to the bottom. The SOI MOS transistor provided in the invention is beneficial to inhibiting the floating body effect, the influences of the parasitic capacitance and the parasitic resistance of a channel transistor are decreased, and the side leakage current is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor transistors, in particular to a body-contact SOI MOS transistor capable of suppressing the floating body effect of an SOI MOS (Metal Oxide Semiconductor) transistor. Background technique [0002] SOI (Silicon On Insulator) refers to silicon-on-insulator technology, and SOI technology is recognized as one of the mainstream semiconductor technologies in the 21st century. SOI technology effectively overcomes the shortage of bulk silicon materials, fully exploits the potential of silicon integrated circuit technology, and is gradually becoming the mainstream technology for manufacturing high-speed, low power consumption, high integration and high reliability VLSI. [0003] SOI MOS is divided into partially depleted SOI MOS (PDSOI) and fully depleted SOI MOS (FDSOI) according to whether the active body region is depleted. Generally speaking, the top silicon film of fully depleted SOI MOS is relatively thi...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06
Inventor 李莹毕津顺罗家俊韩郑生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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