Method and system for manufacture of target material

A manufacturing method and target material technology, which is applied in the metal material coating process, ion implantation plating, coating, etc., can solve the problem of irregular etching morphology, inability to characterize the use efficiency of multiple targets, and difficulties in theoretical calculation formulas and other issues to achieve the effect of optimizing production

Inactive Publication Date: 2014-07-23
BOE TECH GRP CO LTD +1
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Problems solved by technology

[0007] In the process of realizing the present invention, the inventor found that the existing calculation method has the following disadvantages: due to the irregular etching morphology, it is very difficult to directly deduce the theoretical calculation formula of the target utilization rate by the volume method; and none of the above methods can Characterizing the efficiency of use of multiple targets

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  • Method and system for manufacture of target material
  • Method and system for manufacture of target material
  • Method and system for manufacture of target material

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Embodiment Construction

[0050] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0051] Embodiments of the present invention provide a method for manufacturing a target, which can optimize the production of the target. Such as figure 1 As shown, this embodiment includes:

[0052] Step 101: Obtain the etching quality of the target and the original quality before use through the quality measurement module;

[0053] Step 102: Determine the relative etching depth of the target through the processing module;

[0054] Step 103: The processing module calculates the relative etching quality of the target according to the etching quality and the relative etching depth;

[0055] Step 104: The processing module determines the utilization parameters of the target according to the relative etching quality and the original qu...

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Abstract

The disclosed technology provides a manufacturing method of a target comprising obtaining an initial mass and a residual mass of the target sample, and calculating an etching mass; determining a relative etching depth of the target sample; calculating a relative etching mass based on the etching mass and the relative etching depth; determining a utilization parameter of the target sample based on the relative etching mass and the initial mass of the target sample before being used; and performing a simulation and optimization process on the utilization parameter of the target sample, obtaining target parameters corresponding to a preset value of the utilization parameter, and outputting the target parameters to a manufacturing control center for manufacturing a target. The disclosed technology also provides a manufacturing system of a target.

Description

technical field [0001] The invention relates to the field of TFT-LCD (Thin Film Field Effect Transistor Liquid Crystal Display), in particular to a method and system for manufacturing a target. Background technique [0002] With the development of sputtering technology, the thickness design, production process and cost accounting of ITO (Indium Tin Oxides, nanometer indium tin metal oxide) targets need a perfect measurement index. [0003] The general formula for the existing target utilization rate is expressed as: [0004] TU = M s M o × 100 % = M o - M t M o × 100 % a; [0005] or TU ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/08G01B21/18
CPCG01B2210/56C23C14/3414H01J37/3491G01B21/18H01J37/3414
Inventor 张继凯万冀豫吴洪江林承武
Owner BOE TECH GRP CO LTD
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