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Power semiconductor device

A semiconductor and electric power technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of reduced avalanche tolerance and increased influence of poor contact

Inactive Publication Date: 2012-09-26
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the p-type base layer and the n-type source electrode are electrically connected through the opening of the gate electrode, the influence of poor contact between the p-type base layer and the source electrode becomes larger as the finer details advance.
As a result, the discharge of holes to the source electrode during avalanche breakdown is suppressed, and the avalanche resistance is reduced.

Method used

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no. 1 Embodiment approach

[0020] use Figure 1 ~ Figure 4 The first embodiment will be described. figure 1 It is a main part perspective view of the main part of the electric power semiconductor device 100 of 1st Embodiment. figure 2 In the power semiconductor device of the first embodiment, (a) by figure 1 The plan view of the main part of the horizontal plane of A-A of the perspective view, and (b) through figure 1 The main plan view of the horizontal plane of B-B of the perspective view. image 3 It is the power semiconductor device of the first embodiment viewed from above figure 1 The plan view of the main part seen in the perspective view of FIG. 2 is a figure in which the source electrode 14 and the interlayer insulating film 12 are omitted. Dotted lines indicate layers hidden under the gate electrode 11 . In addition, the area delineated by dashed line C is the same as figure 1 The regions shown in the perspective view correspond to. Figure 4 It is a perspective view of main parts for ...

no. 2 Embodiment approach

[0050] use Figure 7 ~ Figure 9 A second embodiment will be described. Figure 7 It is a main part perspective view of the main part of the electric power semiconductor device 200 of 2nd Embodiment. Figure 8 In the power semiconductor device of the second embodiment, (a) by Figure 7 The plan view of the main part of the horizontal plane of D-D of the perspective view, and (b) through Figure 7 The main plan view of the horizontal plane of E-E of the perspective view. Figure 9 The power semiconductor device according to the second embodiment is viewed from above Figure 7 The plan view of main parts seen in the perspective view of FIG. Figure 9 The dotted line in indicates the layer hidden under the gate electrode 11 . Figure 7-9 All are diagrams illustrating the main part of the element region through which the current of MOSFET 200 flows, and the termination region outside the element region is omitted because it does not relate to the essence of the present inventi...

no. 3 Embodiment approach

[0059] use Figure 10 ~ Figure 11 A third embodiment will be described. Figure 10 In the power semiconductor device of the third embodiment, (a) and figure 1 The plan view of the main part of the horizontal plane at the position corresponding to A-A of the perspective view of , and (b) and figure 1 The main plan view of the horizontal plane of the position corresponding to B-B of the perspective view. Figure 11 It is the power semiconductor device of the third embodiment and viewed from above figure 1 The plan view corresponding to the plan view of main parts seen in the perspective view of FIG. Figure 11 The dotted line in indicates the layer hidden under the gate electrode 11 . Figure 10-11 All are diagrams illustrating the main part of the element region through which the current of the MOSFET 300 flows. The termination region outside the element region is omitted because it does not relate to the essence of the present invention. In addition, the same reference nu...

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Abstract

A power semiconductor device includes a first semiconductor layer (1) of a first conductivity type, a second semiconductor layer (3) provided thereon, mutually separated columnar third semiconductor layers (4) of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers (5) of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers (6) of the first conductivity type, sixth semiconductor layers (8) of the second conductivity type, a gate electrode (11), layer-to-layer insulating films (12), a first electrodeand (13) a second electrode (14). The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.

Description

[0001] This application claims priority from Japanese Patent Application No. 2011-064669 filed on Mar. 23, 2011, the entire contents of which are hereby incorporated by reference. technical field [0002] Embodiments of the present invention relate to a semiconductor device for electric power. Background technique [0003] Generally, in a vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor Field Effect Transistor), the on-resistance largely depends on the resistance of the drift layer. When the impurity concentration is increased to reduce the resistance of the drift layer, the withstand voltage of the p-n junction interface between the base layer and the drift layer decreases, so there is a trade-off relationship between the reduction of on-resistance and the withstand voltage. In order to improve this trade-off relationship, a super junction structure in which an n-type semiconductor layer and a p-type semiconductor layer are...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/36
CPCH01L29/66712H01L29/0878H01L29/78H01L29/7802H01L29/0696H01L29/4238H01L29/36H01L29/1095H01L29/0634
Inventor 大田浩史角保人木村淑铃木纯二入船裕行
Owner KK TOSHIBA
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