A high-frequency oscillator based on superconducting nanowires and its preparation method
A high-frequency oscillator and superconducting nanowire technology, which is applied in the manufacture/processing of superconductor devices, superconducting devices, electrical components, etc., can solve problems such as low oscillation frequency, complicated preparation process, and difficult control, and achieve The effect of simple control and simple preparation process
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Embodiment 1
[0055] The present invention provides a high-frequency oscillator 6 structure based on superconducting nanowires, such as figure 1 shown, including at least:
[0056]The coplanar waveguide 5 includes a dielectric substrate 1, a central conductor strip 2 located on the dielectric substrate 1 and used as a positive electrode, and a ground conductor 3 located on the dielectric substrate 1 and used as a negative electrode; in this embodiment Among them, the dielectric substrate 1 is temporarily selected as MgO, but it is not limited thereto. In other embodiments, the dielectric substrate 1 can also be Si, sapphire, or LaAlO 3 One of them is hereby stated.
[0057] The nanowire 4 is connected to the positive and negative electrodes of the coplanar waveguide 5; the material of the nanowire 4 is a superconducting material. In this embodiment, the superconducting material is temporarily selected as NbN, but it is not limited thereto. In other embodiments, the superconducting materia...
Embodiment 2
[0069] Such as Figures 5a to 5e , the present invention also provides a method for preparing a high-frequency oscillator based on superconducting nanowires, the preparation method at least including the following steps:
[0070] Step 1: If Figure 5a Shown is a cross-sectional view of this step, providing a dielectric substrate 11. In this embodiment, the dielectric substrate 1 is tentatively selected as MgO, but it is not limited thereto. In other embodiments, the dielectric substrate 1 Sheet 1 can also be Si, sapphire, or LaAlO 3 One of them, it is hereby stated that the dielectric substrate 11 can select different substrate materials according to different films, and then deposit a layer of superconducting thin film 12 on the dielectric substrate 11, and the material of the superconducting thin film 12 can be Select various low-temperature and high-temperature superconducting materials. In this embodiment, the superconducting material is temporarily selected as NbN, but ...
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