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Method for improving phosphorosilicate glass morphology of high-density plasma chemical vapor deposition

A chemical vapor deposition, phosphosilicate glass technology, used in gaseous chemical plating, metal material coating process, coating and other directions

Active Publication Date: 2015-01-07
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, due to its process characteristics, the He-based high-density plasma chemical vapor deposition process of phosphosilicate glass is easy to form a flower pattern similar to a flower pattern in the pattern area, such as figure 1 shown

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  • Method for improving phosphorosilicate glass morphology of high-density plasma chemical vapor deposition

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Embodiment Construction

[0022] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0023] When using the traditional high-density plasma chemical vapor deposition hole-filling technology to deposit phosphosilicate glass with a sputtering deposition ratio of 0.129, the height of the "flower pattern" is 280 nanometers, and the shell thickness is 103 nanometers, as figure 2 shown.

[0024] Wherein, sputtering deposition ratio = sputtering rate / deposition rate.

[0025] Increase the sputtering (sputter) rate in the high-density plasma chemical vapor deposition process, that is, when the sputtering deposition ratio is increased to 0.25, although the "flower-shaped outline shell" is significantly reduced and becomes smaller, the gate pattern appears clipping ) and sidewall voids, which are not allowed by process integration, such ...

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Abstract

A method of depositing phosphosilicate glass (PSG) is disclosed. The method includes a first deposition step for depositing a first PSG layer with a sputtering deposition ratio of 0.10 to 0.16, and a second deposition step for depositing a second PSG layer with a sputtering deposition ratio of 0.18 to 0.22 after the first deposition step. The first PSG layer has a thickness smaller than that of the second PSG layer. With such two-step deposition method, flower pattern having a dramatically reduced size can be formed without occurrence of clipping or formation of sidewall voids in the resultant gate patterns. Specifically, the formed flower pattern has a height reduced by about 50% and a thickness reduced by about 30%.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for improving the morphology of phosphosilicate glass deposited by high-density plasma chemical vapor phase. Background technique [0002] At present, the process of growing phosphosilicate glass (PSG) by high-density plasma chemical vapor deposition (HDP CVD) is widely used in the contact hole layer of technology of 130 nanometers or below. Due to the requirement of gapfill, the high-density plasma chemical vapor deposition below 130 nanometers generally uses He instead of Ar as the sputtering gas. [0003] However, due to its process characteristics, the He-based high-density plasma chemical vapor deposition process of phosphosilicate glass is easy to form a flower pattern similar to a flower pattern in the pattern area, such as figure 1 shown. According to different product requirements, some products use phosphosilicate glass wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03B8/04
CPCC23C16/045C23C16/401
Inventor 顾梅梅侯多源张慧君陈建维
Owner SHANGHAI HUALI MICROELECTRONICS CORP