Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional phonon functional material structure comprising resonance units and manufacturing method thereof

A technology of resonant units and functional materials, applied in the field of acoustics, can solve problems such as difficulty in generating a complete band gap

Inactive Publication Date: 2012-10-03
BEIJING JIAOTONG UNIV
View PDF5 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the deficiency that the existing structure is difficult to produce a complete band gap

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional phonon functional material structure comprising resonance units and manufacturing method thereof
  • Three-dimensional phonon functional material structure comprising resonance units and manufacturing method thereof
  • Three-dimensional phonon functional material structure comprising resonance units and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The structure of the three-dimensional phonon functional material containing resonant units is a closed honeycomb material containing resonant units in a square lattice arrangement from the first layer to the Nth layer, which are sequentially bonded to form a three-dimensional phonon functional material structure containing resonant units in a simple cubic lattice arrangement. .

[0046] The first layer of the three-dimensional phonon functional material structure of the closed honeycomb material containing the square lattice arrangement resonance unit is: the first layer of honeycomb core is bonded to the first layer of flat plate 1, and the first layer of honeycomb core is A mass block is placed in a honeycomb, and it is connected to the first layer of flat plate 1 or the honeycomb wall and the first layer of flat plate 1 through one to six connecting bodies; the second layer of flat plate 2 is bonded on the upper surface of the first layer of honeycomb core to make the f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a three-dimensional phonon functional material structure comprising resonance units and a manufacturing method of the three-dimensional phonon functional material structure, which belongs to the field of acoustic materials and the like and overcomes the defect that the existing porous material structure is difficult to generate a complete band gap. The material structure is formed by arranging the resonance units according to simple cubic lattices. The manufacturing method of the material structure comprises the following steps of: making first to Nth layers of closed honeycomb materials comprising the resonance units which are arranged in a square lattice mode; and fixedly connecting the layers to form the three-dimensional phonon functional material structure comprising the resonance units which are arranged in the simple cubic lattice mode. Each resonance unit is formed by a mass block arranged in each honeycomb, one to six connecting bodies, a honeycomb wall and parts of honeycomb core upper and lower flat plates on and under each honeycomb. N is greater than or equal to 5. According to the material structure, the complete band gap can be generated; the width and the position of the band gap can be regulated by regulating the shape of the structure, the geometric dimensioning of the structure and the number of the connecting bodies; and the requirements of different acoustic characteristics are met.

Description

Technical field [0001] The invention belongs to acoustics, and relates to the fields of mechanics, condensed matter physics, mechanics, materials science and the like. Background technique [0002] Since the concept of phononic crystal was put forward in 1993, the research of phononic crystal has attracted wide attention of scholars. Phononic crystal is a kind of acoustic band gap functional material formed by two or more materials periodically arranged. One of the typical properties of phononic crystals is that they produce a phononic band gap, that is, the propagation of elastic waves in a certain frequency range is suppressed. Using the band gap characteristics, it is possible to design a completely vibration-free working environment within a certain frequency range, as well as to design and manufacture new sound insulation and noise reduction materials; it is also possible to design its periodic structure to control the propagation of elastic waves. Therefore, phononic crys...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G10K11/162
Inventor 王艳锋汪越胜柯佼
Owner BEIJING JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com