Crystal silicon dislocation detection method and system

Abstract

The embodiment of the invention discloses a crystal silicon dislocation detection method, which comprises the following steps of: (1) polishing a crystal silicon sample to be detected, corroding the crystal silicon sample by using corrosive liquid, and finishing the corrosion; (2) imaging the crystal silicon to be detected by employing a high-definition imaging system to obtain a crystal silicon corrosion image, and thus obtaining a corrosion pit gray-scale pixel rate of the crystal silicon corrosion image; and (3) obtaining the dislocation density of the crystal silicon sample to be detected according to a relationship between the corrosion pit gray-scale pixel rate and a dislocation density value. In addition, the invention also discloses a crystal silicon dislocation detection system. By the crystal silicon dislocation detection method and the crystal silicon dislocation detection system, the large-dimension crystal silicon can be directly detected, an intuitive dislocation result can be obtained, the detection method is simple and reliable, and a novel method is provided for observing dislocation of the crystal silicon.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a detection method and detection system for crystalline silicon dislocations. Background technique [0002] With the vigorous development of the solar photovoltaic industry, polycrystalline silicon solar cells have gradually become the mainstream of the market. More than 50% of polysilicon solar cells currently on the market are made of cast polysilicon. However, crystal defects in cast polysilicon, such as dislocations, grain boundaries, and micro-defects, are important factors that affect the conversion efficiency of solar cells. [0003] At present, the detection methods for the internal defects of semiconductors such as polycrystalline silicon block mainly include light irradiation detection method, infrared detection method, ultrasonic detection method, corrosion method and so on. However, the operation of these detection methods is not convenient enough, the equ...

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Problems solved by technology

However, the operation of these detection methods is not convenient enough, the equipment used is relatively expensive, and the observation method is relatively microscopic, which is limited to small-scale observation, so it can only be detected for small-sized silicon blocks, and for large-sized silicon block samples. The detection can only be carried out after the cutting operation, which is not only time-consuming, but also the silicon block after cutting cannot be used normally, thus causing a waste of the raw material of the silicon block to be tested

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