Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

30-watt 18db attenuator for aluminum nitride ceramic substrate

A technology of aluminum nitride ceramics and aluminum nitride substrates, applied in electrical components, circuits, waveguide devices, etc., can solve the application requirements of frequency bands above 2G that cannot meet the requirements, the attenuation accuracy cannot meet the requirements, and the return loss increases. and other problems, to achieve the effect of increasing the resistance to high and low temperature impact, avoiding resistance quenching and improving the design

Inactive Publication Date: 2012-10-10
苏州市新诚氏通讯电子股份有限公司
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, when the frequency band used by the attenuator on the market is higher than 2G, the attenuation accuracy cannot meet the requirements, and the return loss becomes larger, which cannot meet the application requirements of the frequency band above 2G.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 30-watt 18db attenuator for aluminum nitride ceramic substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0014] Such as figure 1 As shown, the 30-watt 18dB attenuator of the aluminum nitride ceramic substrate includes an aluminum nitride substrate 1. The back surface of the aluminum nitride substrate 1 is printed with a back conductive layer, and the front surface of the aluminum nitride substrate 1 is printed with wires 2 and resistors R1. R2, R3, resistors R1, R2, and R3 are connected by wires to form an attenuation circuit, and the attenuation circuit is electrically connected to the back conductive layer through silver paste, so that the attenuation circuit is connected to ground. The attenuation circuit is symmetrical along the center line of the aluminum nitride substrate, the output end of the attenuation circuit is connected to a pad 5, the input end is connected to a pad 6, and the two pads 5 and 6 are symmetrical along the center line...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
impedanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a 30-watt 18dB attenuator for an aluminum nitride ceramic substrate. The 30-watt 18dB attenuator comprises an aluminum ceramic substrate, wherein a conductor layer is printed on a back side of the aluminum nitride ceramic substrate; a plurality of resistors and a silver paste lead are printed on a front side of the aluminum nitride substrate; the resistors are connected through the silver paste lead to form an attenuation circuit; and a glass protecting film is printed on the resistors. According to the high-power 30-watt 18dB attenuator for the aluminum nitride ceramic substrate, due to the increase of the areas of the resistors, the performance of the attenuator for resisting high-low-temperature impact is enhanced and the performance index of products meets the requirement. Meanwhile, the quenching to the resistors caused by high temperature during lead welding at an output end is avoided, the risk that the resistors are damaged in the actual use process due to quenching is avoided, the design of the circuit is improved, the attenuation precision reaches 18+ / -1dB within 3G (3rd Generation), standing waves meet the market requirement and further the 30-watt 18dB attenuator can be applied to a 3G network.

Description

Technical field [0001] The invention relates to an aluminum nitride ceramic substrate attenuation sheet, in particular to an aluminum nitride ceramic substrate attenuation sheet of 30 watts and 18 dB. Background technique [0002] At present, most communication base stations use high-power ceramic load sheets to absorb the reverse input power in the communication components. High-power ceramic load sheets can only consume and absorb excess power, and cannot monitor the working status of the base station in real time. , When the base station fails to make judgments in time, it has no protective effect on the equipment. The attenuator integrated with three resistance designs can not only absorb the reverse input power in the communication component in the communication base station, but also adjust the power level on the high-frequency circuit, decoupling, and protect the related equipment. [0003] As aluminum nitride ceramics is still an emerging industry, there is no diversified ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
Inventor 陈建良
Owner 苏州市新诚氏通讯电子股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com