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Optoelectronic device and method for manufacturing thereof

A photoelectric component and negative charge technology, applied in the direction of electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as damage, easy failure of equipment, lower process reliability and equipment availability rate, and achieve the goal of improving efficiency Effect

Inactive Publication Date: 2012-10-17
KUNSHAN ZHONGCHEN SILICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Excessively high process temperature may damage the already fabricated structure on the surface of the optoelectronic component, and may cause the equipment to fail or be damaged easily, thereby reducing process reliability and equipment availability rate

Method used

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  • Optoelectronic device and method for manufacturing thereof
  • Optoelectronic device and method for manufacturing thereof
  • Optoelectronic device and method for manufacturing thereof

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Embodiment Construction

[0026] Preferred embodiments of the present invention will be described in detail below, so as to fully illustrate the features, spirit and advantages of the present invention.

[0027] see figure 1 , figure 1 A photoelectric component 1 according to a preferred embodiment of the present invention is schematically shown in a cross-sectional view. In practical applications, the optoelectronic component 1 according to the present invention can be a solar cell or a photodetector.

[0028] Such as figure 1 As shown, the optoelectronic component 1 according to the present invention comprises a semiconductor structure combination 10 , a first surface passivation layer 12 and a second surface passivation layer 14 . The semiconductor structure assembly 10 includes at least one p-n junction 102 and has an upper surface 104 . figure 1 Only one p-n junction 102 is schematically shown in .

[0029] The first surface passivation layer 12 is formed to cover the upper surface of the sem...

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PUM

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Abstract

The invention provides an optoelectronic device and a method for manufacturing thereof. The optoelectronic device comprises a semiconductor structure combination, a first surface passivation layer formed on an upper surface of the semiconductor structure combination, and a second surface passivation layer formed on the first surface passivation layer. The semiconductor structure combination comprises at least a p-n junction. And especially, interfacial state density of the first surface passivation layer is smaller than that of the second surface passivation layer, and a fixed oxide charge value of the second surface passivation layer is larger than that of the first surface passivation layer.

Description

1. Technical field [0001] The invention provides an optoelectronic device and a manufacturing method thereof, for example, an optoelectronic device such as a photo-detector or a solar cell. And, in particular, the present invention relates to a photoelectric component with high photoelectric conversion efficiency and its manufacturing method. 2. Background technology [0002] With the rapid development of the optoelectronic industry, various optoelectronic components, such as light-emitting diodes, laser diodes, photodetectors, and solar cells, have been widely used in various fields. With the advancement of related technologies, users have higher and higher requirements for performances such as luminous efficiency or photoelectric conversion efficiency of photoelectric components. [0003] Generally speaking, forming a passivation layer on the surface of the photovoltaic component can considerably improve various performances of the photovoltaic component, such as luminous...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/18
CPCY02P70/50
Inventor 陈敏璋陈欣锐徐文庆
Owner KUNSHAN ZHONGCHEN SILICON CO LTD