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Vertical resonant cavity surface emitting laser and manufacturing method thereof

A manufacturing method and resonant cavity technology, applied in lasers, laser components, semiconductor lasers, etc., can solve problems such as unfavorable high-speed component operation, high-impedance mode instability, etc.

Active Publication Date: 2012-10-17
TRUE LIGHT
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Problems solved by technology

[0005] However, although the above design can reduce high-order modes, it will also lead to high impedance and modal instability, which is not conducive to the operation of high-speed components

Method used

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  • Vertical resonant cavity surface emitting laser and manufacturing method thereof
  • Vertical resonant cavity surface emitting laser and manufacturing method thereof
  • Vertical resonant cavity surface emitting laser and manufacturing method thereof

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Embodiment Construction

[0029] Relevant technical content of the present invention, detailed description, and effect, are now described as follows in conjunction with accompanying drawing:.

[0030] Such as Figure 2A As shown, a vertical resonator surface-emitting laser of the present invention mainly includes a substrate 21 and an epitaxial stack 22 formed on the substrate 21 . The epitaxial stack 22 can be based on compound semiconductors of AlGaAs / GaAs system, but not limited thereto, and can also be material systems such as AlN / GaN / InGaN in actual implementation, and can be determined according to the wavelength of the laser required. The wavelength is not limited, and it can be infrared light, visible light or ultraviolet light. To describe its structure in detail, the epitaxial stack 22 sequentially includes a first Bragg reflector 221, a first spacer layer 222, an active layer 223, and a second spacer layer formed on the substrate 21 from bottom to top. 224, and a second Bragg reflector 225...

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Abstract

The invention provides a vertical resonant cavity surface emitting laser and a manufacturing method thereof. The vertical resonant cavity surface emitting laser comprises a substrate and an epitaxial lamination. The epitaxial lamination is formed on the substrate and includes an annular zinc diffusion zone, an annular ion implantation zone under the zinc diffusion zone, an annular oxidation zone under the ion implantation zone, and an active zone under the annular oxidation zone, wherein the zinc diffusion zone has a zinc diffusion through hole, the ion implantation zone has an ion implantation through hole, the oxidation zone has an oxidation through hole, and the zinc diffusion through hole, the ion implantation through hole and the oxidation through hole are in mutual communication. In addition, the present invention also provides the manufacturing method of the vertical resonant cavity surface emitting laser.

Description

technical field [0001] The invention relates to a laser element, in particular to a vertical resonant cavity surface-emitting laser and a manufacturing method thereof. Background technique [0002] The main feature of a vertical cavity surface-emitting laser (VCSEL) is that it can emit light substantially perpendicular to the upper surface of its chip. VCSELs can usually form an epitaxial stack with a multi-layer structure by deposition methods such as chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and are fabricated by common semiconductor processes. [0003] The epitaxial stack includes an active region which is the main light-emitting region, and two stacked layers of Bragg reflectors (DBR) respectively located on the upper and lower sides of the active region. A laser resonant cavity is formed between the stacked layers of the two Bragg reflectors, which can be used for light rays of a specific wavelength generated by the active region to be reflecte...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/187
Inventor 陈志诚陈柏翰吴承儒潘金山
Owner TRUE LIGHT
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