Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chalcogenide compound-based surge protection device and preparation method thereof

A technology of surge protection devices and chalcogenide compounds, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as increasing product size, expensive products, and increasing chip area

Active Publication Date: 2015-04-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

General semiconductor surge protection devices such as pnpn surge protection components or pn diode components are installed on the substrate, which greatly increases the size of the product, increases the area of ​​the chip, and makes the product expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chalcogenide compound-based surge protection device and preparation method thereof
  • Chalcogenide compound-based surge protection device and preparation method thereof
  • Chalcogenide compound-based surge protection device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] see Figure 1 to Figure 5 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chalcogenide compound-based surge protection device which comprises a lower electrode (2), a lower heating electrode (3) arranged on the lower electrode (2), a chalcogenide compound film (5) arranged on the lower heating electrode (3), and an upper electrode (6) arranged on the chalcogenide compound film (5), wherein the lower part of the chalcogenide compound film (5) is electrically connected with the lower electrode (2) by the lower heating electrode (3); and the upper part of the chalcogenide compound film (5) is electrically connected with the upper electrode (6). The invention also provides a preparation method of the chalcogenide compound-based surge protection device. According to the invention, the special threshold conduction characteristic of a chalcogenide compound can be used for realizing overvoltage protection; the chalcogenide compound-based surge protection device is novel in conception and simple in structure, and is very high in overvoltage protection response speed and very strong in overvoltage inhibition capability.

Description

technical field [0001] The invention relates to the field of surge protection in circuits, in particular to an overvoltage surge protection device based on chalcogenide compounds used in circuits. Background technique [0002] In today's SPD information age, computer networks and communication equipment are becoming more and more sophisticated, and the requirements for their working environment are getting higher and higher, while lightning and instantaneous overvoltages of large electrical equipment will pass through power supplies, antennas, and radio signals more and more frequently. Lines such as transceiver equipment intrude into indoor electrical equipment and network equipment, causing damage to equipment or components, casualties, interference or loss of transmitted or stored data, and even misoperation or temporary paralysis of electronic equipment, system suspension, and interruption of data transmission. Local area networks and even wide area networks are compromi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/221H01L21/334H01L21/02
Inventor 陈小刚饶峰王玉婵陈后鹏陈一峰许林海宋志棠周密王月青
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com