Unlock instant, AI-driven research and patent intelligence for your innovation.

Heating method used for maintaining thermal budget to be stable

A heating method and thermal budget technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as processing time variation, device diffusion out of control, device failure, etc.

Active Publication Date: 2012-10-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, changing the processing time of the main process will eventually lead to a significant change in the thermal budget of the device
[0005] Furthermore, when the thermal budget changes greatly, the subsequent further processing of the wafer may cause the overall thermal energy borne by the wafer to exceed the need to maintain the stability of the device, that is, when the thermal budget suddenly increases, if the subsequent processing fails to flow out enough redundancy according to the thermal budget Otherwise, it may cause the device to exceed the total thermal budget and make the diffusion uncontrolled and eventually lead to device failure.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heating method used for maintaining thermal budget to be stable
  • Heating method used for maintaining thermal budget to be stable
  • Heating method used for maintaining thermal budget to be stable

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in combination with schematic embodiments, and a heating process optimization method for maintaining a stable thermal budget is disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various manufacturing processes. These modifications do not imply a spatial, sequential or hierarchical relationship of the modified manufacturing process unless specifically stated.

[0021] figure 1 It is a schematic diagram of an example of an existing heating process. Wherein, the horizontal axis represents time, specifically represents the time spent in each step of the entire heating process, and the vertical axis represents the temperature in the reaction furnace, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a heating method used for maintaining thermal budget to be stable. A virtual process is inserted after a main process, so that the total time of the whole heating process is maintained to be constant, thereby being favourable for maintaining the thermal budget to be stable, and further being favourable for maintaining the performance of a device to be stable.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, in particular to a heating method for maintaining a stable thermal budget. Background technique [0002] Driven by Moore's Law, the semiconductor industry has developed very rapidly over the past decade. As more complex process technologies are developed, good control of the process thermal budget becomes increasingly important to semiconductor manufacturing. For example, after integrated circuits enter the deep submicron and nanometer scale, the feature size continues to shrink, and the impurity ions in the doped region formed by ion implantation or diffusion may accumulate enough energy during multiple heat treatments to escape from the bondage of the substrate material Diffusion into adjacent regions that are separated by a reduced distance often leads to device failure. [0003] During the semiconductor manufacturing process, the most thermal energy comes from heat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00H01L21/02
CPCH01L21/00H01L22/00H01L21/02H01L21/324
Inventor 李春龙
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI