Magnetron, manufacturing method of magnetron and physical deposition room

Abstract

The invention provides a magnetron, a manufacturing method of the magnetron and a physical deposition room. The magnetron comprises an inner magnetic pole and an outer magnetic pole, which have opposite polarity directions and can rotate around the center shaft of a target; the inner magnetic pile is of a spiral line shape and arranged inside the outer magnetic pole; a magnetic field track for enclosing the inner magnetic pole is formed between the inner magnetic pole and the outer magnetic pole; the radius of any angle emitted from the center shaft and the magnetic field track just are intersected for once or twice; the magnetic field track enables the magnetic field scanning strengths obtained by any unit area of the target surface to be roughly equal when the magnetron rotates around the center shaft. Uniform corrosion of the target in the radial direction can be achieved when the magnetron is utilized to carry out a magnetron sputtering technology, thereby effectively improving the utilization rate of the target and the homogeneity of the process. In addition, the magnetron manufactured by the magnetron manufacturing method provided by the invention and the physical deposition room provided by the invention have the same or similar advantages as those of the magnetron.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a magnetron, a method for manufacturing the magnetron, and a physical deposition chamber using the magnetron. Background technique [0002] In recent years, with the rapid development of integrated circuits, liquid crystal displays, thin-film solar cells and LED products, physical deposition chambers for physical thin film deposition processes have been widely used. [0003] see figure 1 , is a schematic diagram of the structure of a typical physical deposition chamber. The equipment mainly includes: a process chamber 1 , an electrostatic chuck 3 arranged inside the process chamber 1 , a target 2 arranged above the process chamber 1 , a magnetron 4 and a drive motor 5 for the magnetron. A suction device 13 is connected to the lower end or side wall of the process chamber 1 . In the magnetron sputtering process, a process gas (for example, argon, etc.) for fo...

AI Technical Summary

Problems solved by technology

The magnetron can realize the magnetic field scanning of the target to a certain extent. However, it can be known from the target corrosion curve disclosed in the above-mentioned patent documents that the magnetron sputtering process cannot realize the target diameter. Uniform corrosion in the direction, so that high target utilization cannot be obtained, and the uniformity of process quality is affected

Images