Method for improving process capability

A process capability index and capability technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor/solid-state device testing/measurement, etc., can solve problems such as inability to adjust, save manpower and material resources, avoid process flow, and process capability The effect of index improvement

Inactive Publication Date: 2012-11-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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Problems solved by technology

However, even if the test results are unsatisfactory, it cannot be adjusted immediately, and the bad products can only be marked and discarded

Method used

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  • Method for improving process capability
  • Method for improving process capability
  • Method for improving process capability

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Embodiment Construction

[0015] After multiple production practices, the inventor found that there is a very close relationship between the standard deviation of the collected data and the process capability index; usually, the smaller the standard deviation of the collected data, the better the stability of the data, and the corresponding process capability index bigger and vice versa. refer to figure 1 , it is not difficult to find that the standard deviation 101 of the collected data is closely related to the process capability index 102 . The inventor utilizes the relationship between the process capability index and the standard deviation of the collected data to effectively improve the process capability index by reducing the standard deviation between the data.

[0016] The present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0017] refer to figure 2 , the present invention provides a method for improving process capabilit...

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Abstract

A method for improving the process capability comprises the steps as follows: a correlation test point is selected; the thickness of a gate oxide of the correlation test point is obtained; the corresponding threshold voltage is evaluated according to the thickness of the gate oxide; corresponding ionic concentration of a lightly doped drain (LDD) is selected for ion implantation according to the evaluated threshold voltage; and the threshold voltage evaluating step and the ion implantation step are performed repeatedly until the threshold voltage tends to normal distribution. The method adjusts the ion implantation concentration through the current measuring thickness of the gate oxide so as to lead the threshold voltage among various batches to tend to normal distribution, so that standard deviation is reduced, the process capability is improved, the redesign of the processing procedure can be avoided, a lot of manual labor and time can be saved, and the production efficiency is improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, and in particular to a method for improving process capability. Background technique [0002] Process capability is the inherent capability of the process, and is usually measured by the process capability index Cpk. The process capability index is used to describe the degree to which the process capability meets the requirements of product quality standards, or the actual processing capability of the process in a stable state for a certain period of time, and is an important parameter in the semiconductor manufacturing process. Generally, the larger the process capability index Cpk, the higher the process capability. Generally, the process capability index can have the following classifications: when Cpk≥2.0, it means that the process capability is excellent, and cost reduction can be considered; when 2.0>Cpk≥1.67, it means that the process capability is excellent and should continue ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/265
Inventor 孔秋东简中祥
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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