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Functional integration of dilute nitrides into high efficiency III-V solar cells

A technology of solar cells and dilute nitrides, applied in the field of energy, to achieve good performance

Inactive Publication Date: 2012-11-28
SOLAR JUNCTION CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, to date, there has not been any report on the thermal stability of such tunnel junctions in multijunction devices

Method used

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  • Functional integration of dilute nitrides into high efficiency III-V solar cells
  • Functional integration of dilute nitrides into high efficiency III-V solar cells
  • Functional integration of dilute nitrides into high efficiency III-V solar cells

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Embodiment Construction

[0053] Referring to Figure 4(b), the operation of a tunnel junction with Erbium Arsenide is shown. This operation involves first tunneling electron carriers from the higher potential n+ state of the III-V material to a thin interlayer of a rare earth-V material, specifically erbium arsenide (ErAs), and then, electron transfer from the rare earth- The intermediate potential of the group V material tunnels to the lower potential p+ state of the III-V material, such as gallium arsenide (GaAs).

[0054] Therefore, electron carriers only need to tunnel through the small barrier to the mid-gap state, and then leave the mid-gap state through the small barrier. This reduction in the size of the tunnel barrier increases the tunnel current for a given applied bias. (See Figure 5 , dotted curve 1). The reduction in tunnel barrier size is also useful when fabricating tunnel junctions with higher bandgap materials.

[0055] For passing through the middle gap state (see Figure 5 , do...

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Abstract

Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time / temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells.

Description

[0001] Cross References to Related Applications [0002] Not applicable [0003] Statement Concerning Rights to Inventions Made in Federally Sponsored Research and Development [0004] Not applicable [0005] "Sequence Listing", Table or Computer Program Listing Attachment See Submitted CD-ROM [0006] Not applicable Background technique [0007] The present invention relates to photovoltaic solar cell technology, and more particularly to methods of constructing high-efficiency multi-junction III-V solar cells. [0008] III-V solar cells are formed by co-integrating individual subcells in a single-layer structure into a single functional solar cell. Each of the subcells absorbs light in a different region of the solar spectrum and converts this light into current and voltage. These subcells are electrically connected by a substructure called a tunnel junction. Each of these substructures affects the overall performance of the solar cell, and integration is not trivial. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L31/0336H01S3/04
CPCH01L31/0687H01L31/03048Y02E10/544H01L31/03042H01L31/035209
Inventor 迈克尔·W·维摩侯曼·B·禺恩维基特·A·萨博尼斯迈克尔·J·谢尔登伊欧雅·富士曼
Owner SOLAR JUNCTION CORP