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Semiconductor light emitting element and method for manufacturing same

A technology for a light-emitting element and a manufacturing method, which is applied to semiconductor devices, semiconductor lasers, electrical components, etc., can solve problems such as cost increase, and achieve the effects of wide light-emitting wavelength width and high light-emitting efficiency

Inactive Publication Date: 2012-11-28
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The light radiated from the rear surface of the SLD can be recovered to a certain extent by installing a mirror or the like inside the assembly package, but in this case, the cost of the package increases

Method used

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  • Semiconductor light emitting element and method for manufacturing same
  • Semiconductor light emitting element and method for manufacturing same
  • Semiconductor light emitting element and method for manufacturing same

Examples

Experimental program
Comparison scheme
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Embodiment approach

[0030] Hereinafter, regarding the semiconductor light-emitting element and the manufacturing method thereof according to the embodiment of the present invention, a blue-violet SLD (central emission wavelength of 405 nm) using a hexagonal GaN-based semiconductor is taken as an example. Figure one Let’s explain.

[0031] figure 1 (a) to (c) are diagrams showing a blue-violet SLD according to an embodiment of the present invention. figure 1 (a) is a plan view when the SLD of this embodiment is viewed from above the substrate. figure 1 (b) is along figure 1 (a) A cross-sectional view showing the Ib-Ib line when the SLD is cut in a direction perpendicular to the paper surface. figure 1 (c) means along figure 1 (a) A cross-sectional view of the SLD of the present embodiment when it is cut in a direction perpendicular to the paper surface as shown in the line Ic-Ic (a view viewed from the light emission direction). in figure 1

[0032] In (c), the cross section of the vicinity of ...

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Abstract

Disclosed is a semiconductor light emitting element that is provided with a nitride semiconductor multilayer film, which is provided on the upper surface of a substrate (1), and which includes an active layer (6). A layer in contact with the lower surface of the active layer (6) or the active layer (6) has at least a recessed section (2), a step or a protruding section formed thereon, and on the upper portion of the nitride semiconductor multilayer film, a ridge stripe, which has the front end surface and the rear end surface, and which is to be an optical waveguide, is formed. The distance between the center in the width direction of the ridge stripe and the center in the width direction of the recessed section (2), the step or the protruding section continuously or gradually changes from the front end surface toward the rear end surface, and the band gap energy in the active layer (6) continuously or gradually changes from the front end surface toward the rear end surface.

Description

Technical field [0001] The technology described in this specification relates to an incoherent semiconductor light emitting element with high luminous efficiency. Background technique [0002] As an incoherent light source required in optical measurement fields such as fiber optic gyroscopes and medical OCT (optical coherent tomography), super luminescent diodes (hereinafter referred to as "SLDs") have attracted attention. The SLD is a semiconductor light-emitting element that uses an optical waveguide similarly to a semiconductor laser (hereinafter referred to as "LD"). In SLD, natural light emission due to the recombination of injected carriers is amplified by the high gain caused by stimulated emission while traveling in the direction of the light exit end face, and is emitted from the light exit end face. The difference between SLD and LD is that it suppresses the formation of an optical resonator caused by end-face reflection, and does not cause laser oscillation in the FP ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/14
CPCH01S5/34333H01S5/0207H01S5/125H01S5/2201H01L33/0045H01S5/3201H01S5/1085B82Y20/00H01S5/164
Inventor 折田贤儿
Owner PANASONIC CORP