Shift register unit, shift register and display device

A technology of shift register and carry output, which is applied in static memory, digital memory information, instruments, etc., can solve the problem of leakage current shift register influence, and achieve the effects of preventing pull-down, reducing leakage current, and ensuring normal operation

Active Publication Date: 2012-12-12
BOE TECH GRP CO LTD +1
View PDF5 Cites 49 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The main purpose of the present invention is to provide a shift register unit, shift register and display device, to solve the impact of the leakage current problem of depletion TFT on the shift register

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shift register unit, shift register and display device
  • Shift register unit, shift register and display device
  • Shift register unit, shift register and display device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0049] like Figure 5 As shown, the first embodiment of the shift register unit of the present invention includes:

[0050] The first output control module 51, which is connected to the pull-up node PU, is used to pull the pull-up node to a high level in the evaluation phase, and pull the pull-up node to a first low level in the reset phase;

[0051] The second output control module 52, which is connected to the pull-down node PD, is used to pull the pull-down node to a high level during the reset phase and the non-working phase;

[0052] The first output control module 51 includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3 and a fourth thin film transistor T4;

[0053] The gate and drain of the first thin film transistor T1 are connected to the input terminal Input(n), and the source is connected to the drain of the second thin film transistor T2;

[0054] The gate of the second thin film transistor T2 is connected to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a shift register unit, a shift register and a display device. The shift register unit comprises a first output control module, a second output control module, a hierarchical output module, and a pull-up node level keeping capacitor, wherein the hierarchical output module is respectively connected with a pull-up node, a pull-down node, a carry signal output end and a drive signal output end, and is used for keeping a high level of a drive signal at the evaluation stage and for keeping a low level at the reset stage, the pre-charging state and the non-work stage by hierarchically outputting the carry signal and the drive signal; and the pull-up node level keeping capacitor is connected between a first low-level output end and the source of a first thin film transistor (TFT) included in the first output control module, and is used for keeping a high level of the pull-up node at the evaluation stage through the first output control module so as to keep high level of the drive signal. The shift register unit provided by the invention can suppress the influence of leakage current of a depletion-type TFT on the shift register.

Description

technical field [0001] The invention relates to the field of organic light-emitting display, in particular to a shift register unit, a shift register and a display device. Background technique [0002] With the development of flat panel display, high resolution and narrow bezel become the trend of development, and to realize high resolution and narrow bezel display, integrating gate drive circuit on the panel is the most important solution. For a-si (amorphous silicon) and p-si (polysilicon) technologies, various existing mature shift register circuits can well achieve this goal. Oxide TFT (transistor), as a very potential semiconductor technology, is simpler and lower cost than p-si process, and has higher mobility than a-si, so it is getting more and more attention. It may be OLED (Organic Light Emitting Diode), the mainstream backplane driving technology for flexible displays. However, the oxide TFT is a depletion transistor, while the aforementioned a-si TFT and p-si T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/20G11C19/28
CPCG11C19/28G09G3/36G09G3/3674G09G2310/0286G09G3/32
Inventor 青海刚祁小敬
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products