Reading-writing conversion system and reading-writing conversion method of phase change memory
A technology of phase-change memory and read-write conversion, which is applied in the direction of static memory, read-only memory, digital memory information, etc. It can solve the problems of increasing the writing cycle, reducing the writing speed of the memory, and reducing the reliability of the system, so as to reduce the Effect of Operating Power Consumption
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Embodiment 1
[0046] Such as Figure 1~Figure 2 As shown, this embodiment provides a read-write conversion system of a phase change memory, and the read-write conversion system at least includes:
[0047] Read and write pulse generation module 101, used to generate read pulses and write pulses;
[0048] The address latch module 102 is used for latching the target address that needs to be operated;
[0049] The reading module 103 is connected to the address latch module 102 and the read / write pulse generating module 101, and is used to read the data of the target address phase-change memory unit;
[0050] The write module 104 is connected to the address latch module 102 and the read / write pulse generation module 101, and is used to write the data to be written into the phase-change memory unit of the target address;
[0051] A data latch module 105, connected to the read module 103 and the write module 104, for latching the data of the target address read by the read module 103 or the data...
Embodiment 2
[0061] This embodiment provides a read-write conversion method of a phase-change memory read-write conversion system, and the read-write conversion method at least includes the following steps:
[0062] 1) Set the write enable to be invalid, input the target address to be operated into the address port of the phase change memory, the address latch module 102 latches the target address, the reading module 103 starts to read the data of the target address, and when the read operation ends When the target address data read is latched to the data latch module 105;
[0063] 2) Input the data to be written into the data latch module 105 from the IO port of the phase change memory, and compare the data in the data latch module 105 with the data to be written by the data comparison module 106 bit;
[0064] 3) Set the write enable to be valid, the write module 104 performs a write operation on bits different from the data in the data latch module 105 and the data to be written, and la...
Embodiment 3
[0070] The present invention also provides another read-write conversion method of the read-write conversion system of the phase change memory, the read-write conversion method at least includes the following steps:
[0071] 1) The write enable is always valid. When the data to be written changes relative to the current target address data, the read / write pulse generation module 101 sends a write pulse to the write module 104, and the write module 104 directly writes the corresponding The data to be written input by the variable memory IO port is written to the target address;
[0072] 2) When the write operation is completed, the data written into the target address is latched into the data latch module 105 .
[0073] Figure 4 Shown is a working timing diagram of a phase change memory read-write conversion method of the present invention. In this sequence, when performing continuous write operations, the write enable signal WE is always valid, and the write operations are ...
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