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Reading-writing conversion system and reading-writing conversion method of phase change memory

A technology of phase-change memory and read-write conversion, which is applied in the direction of static memory, read-only memory, digital memory information, etc. It can solve the problems of increasing the writing cycle, reducing the writing speed of the memory, and reducing the reliability of the system, so as to reduce the Effect of Operating Power Consumption

Active Publication Date: 2012-12-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former will increase the write cycle due to the addition of additional read operations, thereby reducing the write speed of the memory; while the latter greatly increases the complexity of the memory system due to the need to implement independent read and write operations in parallel, thereby reducing system reliability

Method used

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  • Reading-writing conversion system and reading-writing conversion method of phase change memory
  • Reading-writing conversion system and reading-writing conversion method of phase change memory
  • Reading-writing conversion system and reading-writing conversion method of phase change memory

Examples

Experimental program
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Embodiment 1

[0046] Such as Figure 1~Figure 2 As shown, this embodiment provides a read-write conversion system of a phase change memory, and the read-write conversion system at least includes:

[0047] Read and write pulse generation module 101, used to generate read pulses and write pulses;

[0048] The address latch module 102 is used for latching the target address that needs to be operated;

[0049] The reading module 103 is connected to the address latch module 102 and the read / write pulse generating module 101, and is used to read the data of the target address phase-change memory unit;

[0050] The write module 104 is connected to the address latch module 102 and the read / write pulse generation module 101, and is used to write the data to be written into the phase-change memory unit of the target address;

[0051] A data latch module 105, connected to the read module 103 and the write module 104, for latching the data of the target address read by the read module 103 or the data...

Embodiment 2

[0061] This embodiment provides a read-write conversion method of a phase-change memory read-write conversion system, and the read-write conversion method at least includes the following steps:

[0062] 1) Set the write enable to be invalid, input the target address to be operated into the address port of the phase change memory, the address latch module 102 latches the target address, the reading module 103 starts to read the data of the target address, and when the read operation ends When the target address data read is latched to the data latch module 105;

[0063] 2) Input the data to be written into the data latch module 105 from the IO port of the phase change memory, and compare the data in the data latch module 105 with the data to be written by the data comparison module 106 bit;

[0064] 3) Set the write enable to be valid, the write module 104 performs a write operation on bits different from the data in the data latch module 105 and the data to be written, and la...

Embodiment 3

[0070] The present invention also provides another read-write conversion method of the read-write conversion system of the phase change memory, the read-write conversion method at least includes the following steps:

[0071] 1) The write enable is always valid. When the data to be written changes relative to the current target address data, the read / write pulse generation module 101 sends a write pulse to the write module 104, and the write module 104 directly writes the corresponding The data to be written input by the variable memory IO port is written to the target address;

[0072] 2) When the write operation is completed, the data written into the target address is latched into the data latch module 105 .

[0073] Figure 4 Shown is a working timing diagram of a phase change memory read-write conversion method of the present invention. In this sequence, when performing continuous write operations, the write enable signal WE is always valid, and the write operations are ...

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Abstract

The invention provides a reading-writing conversion system and a reading-writing conversion method of a phase change memory. The reading-writing conversion system comprises a reading-writing pulse generation module, an address latch module, a reading module, a writing module, a data latch module and a data comparison module, wherein the reading-writing pulse generation module is used for generating a reading pulse and a writing pulse, the address latch module is used for latching a target address to be operated, the reading module is used for data of a phase change storage unit of the target address, the writing module is used for writing the data to be written into the phase change storage unit of the target address, the data latch module is used for latching the data of the target address read by the reading module or the data of the target address written by the writing module, and the data comparison module is used for comparing the data of the target address and the data to be written. The phase change memory is automatically switched between a speed priority mode and a power consumption priority mode by controlling a reading-writing sequence, so that a purpose for maximally reducing the operation power consumption of the memory in the application field with power consumption priority on the premise that the system reliability of the memory is not reduced.

Description

technical field [0001] The invention relates to a phase change memory system and method, in particular to a phase change memory read-write conversion system and method. Background technique [0002] Phase-change memory (PC-RAM) is a new type of resistive non-volatile semiconductor memory based on the idea that phase-change thin films can be applied to phase-change storage media proposed by Ovshinsky in the late 1960s and early 1970s. , compared with the existing semiconductor storage technologies, it has low power consumption, non-volatility, high density, radiation resistance, non-volatility, high-speed reading, long cycle life, and device size scalability (nanometer grade), high and low temperature resistance (-55°C to 125°C), anti-vibration, anti-electronic interference and simple manufacturing process (can match the existing integrated circuit process), etc., is the next generation widely favored by the industry. The most powerful competitor in memory has broad market p...

Claims

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Application Information

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IPC IPC(8): G11C11/56G11C16/06G11C16/26
Inventor 李喜宋志棠陈后鹏蔡道林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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