High-speed and low-power Ti-Ge-Sb nanocomposite phase change thin film and its preparation and application
A nano-composite, low-power technology, applied in the field of materials in the field of microelectronics technology, can solve the problems of alloy thermal stability and crystalline resistivity are not high enough, to achieve fast SET operation speed, fast operation speed, high crystalline resistance Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0041] The present embodiment provides Ti-Ge-Sb nano phase change thin film, and its component is Ti 0.07 (Ge 8 Sb 92 ) 0.93 , the thickness of the film is 50nm.
[0042] The main steps of the main preparation method of the phase change film are as follows:
[0043] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:
[0044] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 8 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0045] (b) The substrate is placed in an acetone solution, and cleaned by ultrasonic waves for 8 minutes to remove organic impurities on the surface of the substrate;
[0046] (c) Place the substrate in deionized water, clean it with ultrasonic waves for 8 minutes, and clean the surface again;
[0047] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box for later use. ...
Embodiment 2
[0057] The present embodiment provides Ti-Ge-Sb nano phase change thin film, and its component is Ti 0.14 (Ge 8 Sb 92 ) 0.86 , the thickness of the film is 50nm.
[0058] The main steps of the main preparation method of the phase change film are as follows:
[0059] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:
[0060] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 8 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0061] (b) The substrate is placed in an acetone solution, and cleaned by ultrasonic waves for 8 minutes to remove organic impurities on the surface of the substrate;
[0062] (c) Place the substrate in deionized water, clean it with ultrasonic waves for 8 minutes, and clean the surface again;
[0063] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box for later use. ...
Embodiment 3
[0073] The present embodiment provides Ti-Ge-Sb nano phase change thin film, and its component is Ti 0.28 (Ge 8 Sb 92 ) 0.72 , the thickness of the film is 50nm.
[0074] The main steps of the main preparation method of the phase change film are as follows:
[0075] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:
[0076] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 8 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0077] (b) The substrate is placed in an acetone solution, and cleaned by ultrasonic waves for 8 minutes to remove organic impurities on the surface of the substrate;
[0078] (c) Place the substrate in deionized water, clean it with ultrasonic waves for 8 minutes, and clean the surface again;
[0079] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box for later use. ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information

- Generate Ideas
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com