Vertical non-volatile switch with punch through access and method of fabrication therefor

Abstract

A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.

Description

Background technique [0001] Data storage devices generally operate to store and retrieve data in a fast and efficient manner. Some memory devices utilize semiconductor arrays of solid-state memory cells to store individual bits of data. Such memory cells may be volatile (eg, DRAM, SRAM) or non-volatile (RRAM, STRAM, Flash, etc.). [0002] As can be appreciated, volatile memory cells typically retain data stored in memory only as long as operating power is continuously supplied to the device, while non-volatile memory cells typically retain data in memory even when no operating power is applied. data storage. [0003] Generally, data storage devices, including select devices, are fabricated in a lateral configuration along a common substrate. However, as electronic devices become more complex, space issues such as noise and electrical shorts can cause devices to operate inefficiently. In this way, the vertical expansion of electrical components can reduce frequently encount...

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Problems solved by technology

However, as electronic devices become more complex, space issues such as noise and electrical shorts can make devices operate inefficiently

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