Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus

Abstract

The invention relates to a solid-state imaging apparatus, a method of manufacturing the solid-state imaging apparatus, and an electronic apparatus. The solid-state imaging apparatus comprises a transfer gate electrode formed on a semiconductor substrate; and a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area. The electronic apparatus includes an optical lens, the above-mentioned solid-state imaging apparatus, and a signal processing circuit. According to the present disclosure, transfer efficiency can be improved while suppressing generation of dark current. Furthermore, image quality has been improved.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2011-143458 filed in the Japan Patent Office on Jun. 28, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and electronic equipment. Background technique [0004] Heretofore, examples of solid-state imaging devices used in digital cameras, video cameras, and the like include CCD-type solid-state imaging devices and CMOS-type solid-state imaging devices. In these solid-state imaging devices, a light receiving unit is formed in each of a plurality of pixels formed in a two-dimensional matrix, and signal charges are generated in the light receiving unit in accordance with the amount of received light. Then, the signal charges generated in the light ...

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Problems solved by technology

[0008] As described above, in the configuration of the solid-state imaging device of the related art, there is a trade-off relationship between securing pinning and securing a transfer margin for suppressing dark current, and the region near the gate electrode is transferred design is difficult

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