Photolithography method

Abstract

The invention provides a photoetching method which includes the steps: forming rectangular photoresist on a semiconductor layer to be etched; and forming elliptical photoresist at one end or two ends of the rectangular photoresist to form similar bone-shaped patterned photoresist after the photoresist flows back. As corresponding photoresist positions prone to line edge shortening are compensated, rectangular edge shortening of the etched semiconductor layer caused by the LES (line edge shortening) effect is avoided, and the performance of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a photolithography method. Background technique [0002] Defects in the semiconductor manufacturing process are a major factor affecting the yield and performance of semiconductor devices. When manufacturing small-sized semiconductor devices, the process requirements for photolithography and etching processes are particularly strict. [0003] In the photolithography process, especially when making small-sized shapes, due to the optical diffraction effect and the etching itself cannot achieve 100% anisotropy, it will be difficult to achieve the desired shape after etching. For example, when forming rectangular thin strips by photolithography, due to the limitation of photolithography process, the photoresist with regular rectangular cubic structure cannot be formed; even if a regular rectangular cubic structure can be formed, in the subsequent etching p...

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Problems solved by technology

[0003] In the photolithography process, especially when making small-scale shapes, due to the optical diffraction effect and the etching itself cannot achieve 100% anisotropy, it will be difficult to achieve the desired shape after etching.

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