In-situ temperature testing device and method

Abstract

The embodiment of the invention provides an in-situ temperature testing device and an in-situ temperature testing method. The in-situ temperature testing device is used for performing absorption spectrum test analysis or reflection spectrum test analysis on a light signal which is transmitted through a substrate or a deposited material layer on the substrate or is reflected by the substrate or the deposited material layer on the substrate in a vapor deposition process, so that an absorption spectrum curve / or a reflection spectrum curve corresponding to the substrate or the deposited material layer on the substrate can be obtained; the width of a forbidden gap corresponding to the substrate or the deposited material layer on the substrate can be obtained by analyzing the absorption spectrum curve / or the reflection spectrum curve; the temperature corresponding to the width of the forbidden gap of the substrate or the deposited material layer on the substrate is determined on the basis of a relation curve between the width of the forbidden gap of a material and a temperature; and therefore, the substrate temperature and the substrate temperature distribution can be accurately monitored by utilizing the in-situ temperature testing device provided by the embodiment of the invention.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an in-situ temperature testing device and method for testing the temperature of a substrate or a deposited material layer on the substrate. Background technique [0002] MOCVD is the English abbreviation of Metal-organic Chemical Vapor Deposition. MOCVD is a new vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). It uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as source materials for crystal growth, and conducts vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various groups III-V, II - Thin-layer monocrystalline materials of group VI compound semiconductors and their multicomponent solid solutions. [0003] The principle of the conventional MOCVD process will be described below. Specifically, please refer to figure 1 Shown is a schematic dia...

AI Technical Summary

Problems solved by technology

Realize the monitoring of the temperature and temperature distribution of the deposited material layer on the substrate or substrate, so as to solve or improve the temperature uniformity of the substrate or epitaxial layer during the epitaxial process, and improve the thickness and composition uniformity of the deposited material layer , to alleviate or eliminate the problem of warpage deformation of substrates and deposited material layers

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