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Electro-absorption reverse bias voltage tuning method for eml laser

A technology of reverse bias voltage and electric absorption, which is applied in the field of optoelectronic communication, can solve problems such as the inability to accurately find EML lasers, achieve optimal long-distance transmission performance, improve OSNR, and avoid TOSA scrapping or downgrading.

Active Publication Date: 2014-10-22
SOURCE PHOTONICS CHENGDU
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiency in the prior art that the optimal VEA value of the EML laser cannot be accurately found out, and to provide an electro-absorption reverse bias voltage tuning algorithm for an optical transmitter, which can Accurately find out the electro-absorption reverse bias voltage value that makes TOSA work best

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  • Electro-absorption reverse bias voltage tuning method for eml laser
  • Electro-absorption reverse bias voltage tuning method for eml laser
  • Electro-absorption reverse bias voltage tuning method for eml laser

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[0033] The present invention will be further described in detail below in conjunction with test examples and specific embodiments. However, it should not be understood that the scope of the above subject matter of the present invention is limited to the following embodiments, and all technologies realized based on the content of the present invention belong to the scope of the present invention.

[0034] refer to Figure 1 to Figure 5 ,in, Figure 1 to Figure 5 The EA shown in represents VEA, that is, the electroabsorption reverse bias voltage, ER represents the extinction ratio, MM represents the optical eye diagram margin, DP represents the dispersion, and Ibias represents the bias current. Electroabsorption reverse bias voltage has a direct impact on laser output optical power, chirp, extinction ratio, dispersion, optical eye diagram margin, bias current, etc. The larger the VEA value, the higher the optical eye diagram margin and output optical power. The larger the valu...

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Abstract

The invention discloses an evolutionary operation algorithm for an electric absorption reverse bias voltage of an EML (electo-absorption modulated laser) The electric absorption reverse bias voltage evolutionary operation includes: firstly, setting the minimum initial value of the electric absorption reverse bias voltage, and then adjusting values of light eye pattern intersection, extinction ratio, temperature and automatic laser power controlling so that the light eye pattern intersection, the extinction ratio, an output laser power and operating wavelength of the EML laser can meet requirements of utilization; detecting whether the electric absorption reverse bias voltage VEA reaches the maximum value of a set electric absorption reverse bias voltage range or not; and if not, gradually increasing the VEA value till bias current, the output laser power, the extinction ratio, the light eye pattern intersection and light eye pattern surplus all meet a set range requirement, and then determining that the VEA value is the optimal VEA value. By the evolutionary operation algorithm, the EML laser is guaranteed to obtain the minimum dispersion during long-distance transmission, and yield rate of the EML laser is increased.

Description

technical field [0001] The invention relates to the field of photoelectric communication, in particular to an electroabsorption reverse bias voltage tuning algorithm of an EML laser. Background technique [0002] Transmitter Optical Subassembly (TOSA for short) is an optical device that converts electrical signals into optical signals. One of the more important lasers in TOSA lasers is EML laser (electro-absorption modulated laser). EML laser adopts the integrated packaging technology of electro-absorption modulator and high-speed DFB laser. Components such as thermistors have the characteristics of high integration, high speed, and high isolation. EML lasers can be used in the field of high-speed data transmission and communication, especially the use of high-precision negative temperature coefficient thermistors (NTC) as temperature sensors, with MCU (microprocessor) as the control core, through precise temperature control of EML lasers, Suitable for long-distance transm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/10H04B10/50
Inventor 孙朝元易志林杨振宇
Owner SOURCE PHOTONICS CHENGDU
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