Wavelength-tunable micro-nano laser method based on semiconductor nanowires

A nanowire and semiconductor technology, applied in the field of micro-nano laser, can solve the problems of difficult large-scale practical production, tuning width limitation, etc., and achieve the effect of easy control and adjustment

Active Publication Date: 2014-06-25
ZHEJIANG UNIV
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Problems solved by technology

This method requires strict control of the composition ratio and is difficult to produce on a large scale
Another commonly used method is to change the shape of the cavity to achieve the purpose of tuning, but the tuning width achieved by this method is greatly limited

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  • Wavelength-tunable micro-nano laser method based on semiconductor nanowires
  • Wavelength-tunable micro-nano laser method based on semiconductor nanowires
  • Wavelength-tunable micro-nano laser method based on semiconductor nanowires

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Embodiment Construction

[0018] The wavelength-tunable micro-nano laser method based on semiconductor nanowires is: inject the laser light into one end of the nanowires, and use the method of bending to breaking to obtain semiconductor nanowires of different lengths. The other end of the nanowire with a long length can obtain the outgoing laser light corresponding to different wavelengths, so that the central wavelength of the outgoing laser light can be controlled by adjusting the length of the semiconductor nanowire.

[0019] The specific steps of the wavelength-tunable micro-nano laser method based on semiconductor nanowires are:

[0020] 1) Using the method of vapor-liquid-solid to grow CdSe semiconductor nanowires, the nanowires with good characteristics were obtained by controlling the temperature at 830 degrees Celsius, the air pressure at 480 mba, the airflow rate at 200 ml / min, and the heating time for 1 hour. 200 nm ~ 2 μm;

[0021] 2) Use a glass tube placed horizontally, place the raw mat...

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Abstract

The invention discloses a wavelength-tunable micro-nano laser method based on semiconductor nanowires. Laser is irradiated to one end of a nanowire to obtain semiconductor nanowires with different lengths by utilizing a bending-to-breaking method, and emergent lasers with corresponding different wavelengths can be obtained at the other end of the nanowires with different lengths under the condition that the position of the incident laser is not changed, so that the central wavelength of the emergent laser is controlled through adjusting the lengths of the semiconductor nanowires. According to the semiconductor nanowire based wavelength-tunable micro-nano laser method, the wavelength of output laser is effectively and easily controlled through easily adjusting the lengths of the nanowires; and the characteristic of the output laser is controlled through optimizing the diameters, the lengths and the like of the nanowires.

Description

technical field [0001] The invention relates to semiconductors, micro-optical components and systems, and in particular to a micro-nano laser method based on semiconductor nanowires with tunable wavelength. Background technique [0002] Lasers based on semiconductor nanowires such as ZnO, CdS, and CdSe have attracted extensive attention of researchers in recent years. Wavelength tunable lasers have important applications in the fields of optical communication, environmental monitoring, and spectral analysis. The current method used to realize wavelength tunable lasers is mainly to use doping to adjust the composition of nanowires to obtain nanostructures with tunable energy bands. This method requires strict control of the composition ratio, which is difficult for large-scale practical production. Another commonly used method is to change the shape of the cavity to achieve the purpose of tuning, but the tuning width achieved by this method is greatly limited. C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/30
Inventor 杨青李佳蓓孟超杨萌兮
Owner ZHEJIANG UNIV
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