AlN substrate-based graphene CVD direct epitaxial growth method and manufactured device

A technology of epitaxial growth and graphene, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that affect the electrical characteristics of graphene devices, it is difficult to transfer graphene cleanly, reduce the mobility of graphene, etc., to achieve Effects of improving reliability and electrical characteristics, simplifying growth steps and device manufacturing process steps, and reducing manufacturing costs

Active Publication Date: 2013-01-30
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the most significant disadvantages is that a metal catalytic substrate must be used, so it is difficult to cleanly transfer graphene to other dielectric substrates suitable for devic

Method used

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  • AlN substrate-based graphene CVD direct epitaxial growth method and manufactured device
  • AlN substrate-based graphene CVD direct epitaxial growth method and manufactured device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The realization steps of the present invention are as follows:

[0023] Step 1, AlN substrate preparation.

[0024] Put the AlN substrate into acetone, ethanol and deionized water successively for cleaning, each time for 10 minutes, take out the substrate from the deionized water, and dry it with high-purity nitrogen (99.9999%).

[0025] Step 2, vacuumize the reaction chamber.

[0026] Place the AlN substrate of semiconductor device level in the chemical vapor deposition CVD reaction chamber, and pump the vacuum to 10 -6 Torr to remove residual gas in the reaction chamber.

[0027] Step 3, AlN substrate surface pretreatment.

[0028] Introduce H into the reaction chamber 2 The substrate surface pretreatment was carried out, the gas flow rate was 2 sccm, the vacuum degree of the reaction chamber was 0.1 Torr, the substrate temperature was 950° C., and the processing time was 5 minutes.

[0029] Step 4, graphene CVD epitaxial growth.

[0030] Introduce Ar and CH int...

Embodiment 2

[0034] The realization steps of the present invention are as follows:

[0035] Step A, A1N substrate preparation.

[0036] The AlN substrate was washed in acetone, ethanol and deionized water successively, each time for 20 minutes, the substrate was taken out from the deionized water, and dried with high-purity nitrogen (99.9999%).

[0037] In step B, the reaction chamber is evacuated.

[0038] Place the AlN substrate of semiconductor device level in the chemical vapor deposition CVD reaction chamber, and pump the vacuum to 10 -6 Torr to remove residual gas in the reaction chamber.

[0039] Step C, pretreating the surface of the AlN substrate.

[0040] Introduce H into the reaction chamber 2 The substrate surface pretreatment was carried out, the gas flow rate was 5 sccm, the vacuum degree of the reaction chamber was 0.2 Torr, the substrate temperature was 950° C., and the processing time was 10 minutes.

[0041] Step D, graphene CVD epitaxial growth.

[0042] Introduce ...

Embodiment 3

[0046] The realization steps of the present invention are as follows:

[0047] Step 1, the AlN substrate is prepared.

[0048]The AlN substrate was washed in acetone, ethanol and deionized water successively, each time for 30 minutes, the substrate was taken out from the deionized water, and dried with high-purity nitrogen (99.9999%).

[0049] Step 2, the reaction chamber is evacuated.

[0050] Place the AlN substrate of semiconductor device level in the chemical vapor deposition CVD reaction chamber, and pump the vacuum to 10 -6 Torr to remove residual gas in the reaction chamber.

[0051] Step 3, pretreatment of the surface of the AlN substrate.

[0052] Introduce H into the reaction chamber 2 The substrate surface pretreatment was carried out, the gas flow rate was 5 sccm, the vacuum degree of the reaction chamber was 0.2 Torr, the substrate temperature was 1000° C., and the processing time was 8 minutes.

[0053] Step 4, graphene CVD epitaxial growth.

[0054] Introd...

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PUM

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Abstract

The invention discloses an AlN substrate-based graphene CVD direct epitaxial growth method. By adopting an II-VI family compound semiconductor AlN as a substrate, through reasonably preprocessing the AlN substrate, regulating the growth pressure, flow and temperature, the optimization of the graphene growth is realized, graphene directly grows on the AlN without using metal as a catalyst, the growing graphene is not transferred, provides a material for a AlN-graphene structure device, and can be directly used for manufacturing various devices, thus electrical properties and reliability of the devices are improved, and complexity of device manufacture is lowered. According to the AlN substrate-based graphene CVD direct epitaxial growth method, a large-area graphene material with semiconductor cleanness can be grown, the single-layer controllability exceeds 80 percent, and the area of a wafer can reach 8 inches maximally.

Description

technical field [0001] The invention belongs to the field of semiconductor material manufacturing and relates to the key technology of semiconductor material preparation, in particular to a large-area graphene controllable epitaxial growth method based on III-V compound semiconductor AlN substrates, which can be used for large-area wafers without transfer Preparation of grade graphene materials. technical background [0002] With the development of integrated circuits, the critical dimensions of silicon (Si)-based devices have reached theoretical and technical limits, and quantum effects have become the main limiting mechanism. Graphene material is a carbon-based two-dimensional crystal. It is the lightest and thinnest material known so far. Its single layer is only atomically thick. It has extremely excellent physical and chemical properties, such as extremely high carrier mobility (theoretical estimation More than 200000cm 2 V -1 the s -1 , is hundreds of times that of...

Claims

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Application Information

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IPC IPC(8): H01L21/205
Inventor 王东宁静韩砀闫景东柴正张进成郝跃
Owner XIDIAN UNIV
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