Unlock instant, AI-driven research and patent intelligence for your innovation.

Resist removal device and resist removal method

A resist and solvent technology, applied in the field of resist removal devices, can solve problems such as difficulties, and achieve the effect of preventing oxidation and effectively removing

Inactive Publication Date: 2013-01-30
TOKYO ELECTRON LTD +1
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Resist after substrate treatment such as etching and doping changes its chemical structure, so it is often difficult to remove it by cleaning with a solvent or the like

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist removal device and resist removal method
  • Resist removal device and resist removal method
  • Resist removal device and resist removal method

Examples

Experimental program
Comparison scheme
Effect test

Deformed example 1

[0061] The resist removing apparatus of Modification 1 is configured as follows: The resist 103 is transported out of the system by the transport gas that transports the resist 103 dissolved and decomposed by the cluster spray of the organic solvent. The resist removing apparatus of Modification 1 differs from the above-mentioned embodiment only in the configuration of the nozzle 31 and the delivery of the conveying gas, and therefore the above-mentioned difference will be mainly described below.

[0062] Figure 7 It is a side cross-sectional view schematically showing a configuration example of the resist removing apparatus of Modification 1. The nozzle 231 of the cluster spray unit 203 constituting the resist removal apparatus of Modification 1 is supported by the nozzle arm 42 so that the spray direction of the organic solvent becomes the substantially normal direction of the wafer W. When the cluster ejection of the organic solvent is performed substantially perpendicular to...

Deformed example 2）

[0068] The resist removing apparatus of Modification 2 is configured to fix the cluster jetting unit in the processing chamber to transport the wafer, and includes a suction unit (suction unit) that sucks the resist removed by the cluster jetting. The resist removal apparatus of Modification 2 is different from the above-mentioned embodiment only in the above-mentioned structure, and therefore, the above-mentioned difference will be mainly described below.

[0069] Picture 9 It is a side cross-sectional view schematically showing a configuration example of a resist removing apparatus of Modification 2. The resist removal apparatus of Modification 2 includes a processing chamber 301 in which the nozzle 31 of the cluster spray unit 3 is fixed to the substantially central portion of the top plate. In addition, a suction unit 9 that sucks the resist removed by the spray of the cluster is provided on the ceiling of the processing chamber 301, and the nozzle 31 and the suction unit 9...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a resist removal device that enables resist to be removed more effectively than conventional resist removal methods that use solvents, without oxidizing the substrate material other than the resist. A resist removal device, which removes resist from a wafer on which a resist film has been formed, is provided with a cluster spraying means (3) which sprays a wafer (W) with clusters, each cluster comprising a plurality of organic solvent molecules.

Description

Technical field [0001] The present invention relates to a resist removing device and a resist removing method for removing resist from a substrate on which a resist film is formed Background technique [0002] As a resist removal method that removes unnecessary resist from the wafer after substrate processing steps such as etching and doping, high-temperature SPM (Sulfuric acid / hydrogen peroxide mixture), oxygen Plasma (for example, Patent Document 1). Since the chemical structure of the resist after substrate treatment such as etching and doping is changed, it is difficult to remove it by a cleaning method such as a solvent in most cases. Especially in high-dose resists, a strong shell layer (carbon-rich layer) is formed on the surface of the resist. Therefore, the current situation is to use high-temperature SPM, oxygen plasma, or the like for resist removal. [0003] Prior art literature [0004] Patent literature [0005] Patent Document 1: Japanese Patent Application Publicat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/42
CPCH01L21/31133G03F7/422H01L21/6708H01L21/0273
Inventor 土桥和也布瀬晓志
Owner TOKYO ELECTRON LTD