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Method and apparatus for adjusting ion beam parallelism in an ion implanter

A technology of ion beams and equipment, applied in the field of ion implantation, can solve the problems of changing the positioning of the end position and not being able to maintain a wide range

Inactive Publication Date: 2016-03-16
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, parallel and normal incidence of the ion beam cannot be maintained over a wide range of ion beam parameters, and changing the positioning of the tip position is very difficult

Method used

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  • Method and apparatus for adjusting ion beam parallelism in an ion implanter
  • Method and apparatus for adjusting ion beam parallelism in an ion implanter
  • Method and apparatus for adjusting ion beam parallelism in an ion implanter

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Embodiment Construction

[0031] A simple block diagram of an example of an ion implanter suitable for embodying the present invention is shown in figure 1 Show in. The ion beam generator 10 generates the required type of ion beam, accelerates the ions in the ion beam to the required energy, performs mass / energy analysis on the ion beam to remove energy and mass pollutants, and provides low-content energy and mass pollution The energy-carrying ion beam 12. The scanning system 16, which includes a scanner 20 and an angle corrector 24, deflects the ion beam 12 to generate a scanning ion beam 30 having parallel or nearly parallel ion trajectories. The end position 32 includes a platen 36 that supports a semiconductor wafer 34 or other workpiece in the range of the scanning ion beam 30 to implant a desired kind of ion into the semiconductor wafer 34. The ion implanter may include other components well known to those skilled in the art. For example, the end position 32 generally also includes an automatic...

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PUM

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Abstract

A method and equipment for ion injection into work pieces (such as semiconductor wafer) includes generation of ionic beam and testing the parallel of the ionic beam to be adjusted to the required parallel state accordingly and testing the direction of the adjusted ionic beam to direct the work piece wiht the injected angle refer to the tested ionic beam direction to exercise injections with the directed work piece to be carried out by the highly parallel ionic beam.

Description

[0001] This application is a divisional application for an invention patent application with an application date of February 28, 2002, an application number of 02106603.5, and an invention title of "Method and equipment for adjusting ion beam parallelism in an ion implanter". Technical field [0002] The present invention relates to a method and system for ion implantation of semiconductor wafers or other workpieces. More specifically, the present invention relates to a method and apparatus for adjusting ion beam parallelism in an ion implanter. Background technique [0003] Ion implantation is a standardized technique for introducing conductivity-changing blends into semiconductor wafers. Ionize the desired blend in the ion source, accelerate the ions to form an ion beam of specified energy, and direct the ion beam to the surface of the wafer. The energy-bearing ions in the ion beam penetrate into the loose part of the semiconductor material and are embedded in the crystal lattic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/141H01J37/317H01L21/265C30B31/22
Inventor 约瑟夫·C·奥利桑安东尼·丽奥
Owner VARIAN SEMICON EQUIP ASSOC INC