Method for purifying silicon using a cascade process
A silicon crystal and silicon crystallization technology, which is applied in the field of silicon purification by cascade process, can solve the problems of resistivity change and yield reduction, and achieve the effect of low impurity content and effective use.
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[0024] In the preparation methods described herein, without departing from the principle of the present invention, the steps can be carried out in any order, unless the time sequence or operation sequence is explicitly stated. A recitation in a claim that a first step is performed followed by several other steps should be taken to mean that said first step is performed before any other steps, but that said other steps may be performed in any suitable order unless further The order among the other steps is described. For example, a claim that states "step A, step B, step C, step D and step E" should be interpreted as meaning that step A is performed first and step E is performed last, and steps B, C and D can be performed in step A and E in any order that still falls within the literal scope of the claimed method. A given step or subset of steps may also be repeated.
[0025] Additionally, specified steps may be performed concurrently unless explicit claim language recites th...
Embodiment approach
[0100] The present invention provides the following exemplary embodiments:
[0101] Embodiment 1 provides a method of purifying a first material comprising:
[0102] (a) substantially contacting said first material with a purification material to provide a first mixture;
[0103] (b) melting the first mixture sufficiently to provide a first molten mixture; and
[0104] (c) cooling the first molten mixture sufficiently to form first crystals of the first material and a third mother liquor;
[0105] Wherein, the purification material comprises a second material;
[0106] wherein the first material has a higher melting point than the second material;
[0107] Wherein, the second material is metal.
[0108] Embodiment 2 provides the method of embodiment 1, wherein the purified material has fewer impurities than the third mother liquor.
[0109] Embodiment 3 provides the method according to any one of embodiments 1-2, wherein the purified material comprises a mother liquor obt...
Embodiment 1
[0224] Mix single-pass mother liquor A with MG-Si or other silicon raw materials. The molten mixture SP (single pass) B is cooled to grow silicon crystal "SP flake B" and SP mother liquor B. Separate SP mother liquor B from SP flakes B. The SP mother liquor B is sold as a by-product to the aluminum casting industry, die casting industry and secondary smelting industry. The mixture is about 40% silicon and 60% aluminum. The mixture is melted to about liquidus temperature. The mixture is heated above about 950°C. The mixture was cooled to about 720°C. The mixture yielded about 32% by weight flakes. Cooling takes place over about 15 hours. Use batch sizes of about 2,200 kg or more.
[0225] Mix double pass (DP) mother liquor B with MG-Si or other silicon source. The molten mixture SPA is cooled to grow silicon crystal SP flake A and SP mother liquor A. Separate the SP mother liquor A from the SP flake A.
[0226] The SPA flakes and / or SPB flakes are mixed with DP master...
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Abstract
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