Light intensity detection circuit and method

Abstract

The invention relates to a light intensity detection circuit and method. The light intensity detection circuit comprises a light sensing module, a voltage detection module and a light intensity information acquisition module. One end of the light sensing module is connected with a reference voltage end, the light sensing module is used for generating current passing through the light sensing module under the stimulus of light irradiation and comprises more than two photovoltaic conversion assemblies which are connected in parallel, and the directions of the current generated by the photovoltaic conversion assemblies are not completely the same. The voltage detection module is connected with the other end of the lighting sensing module and used for detecting voltage at two ends of the light sensing module, and a mapping relation exists between the voltage and the light intensity information of the light irradiation. The light intensity information acquisition module is used for acquiring the light intensity information of the light irradiation according to the voltage. The light sensing module, the voltage detection module and the light intensity information acquisition module are integrated in a single integrated circuit. The light intensity detection circuit can accurately detect the light intensity information at the high temperature.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a light intensity detection circuit and method. Background technique [0002] The light intensity detection circuit is a circuit that detects luminous intensity information. Such as figure 1 Shown is a schematic diagram of the circuit structure of a light intensity detection circuit in the prior art, the light intensity detection circuit includes a switch transistor M, a photodiode D, a capacitor C and a voltage detection circuit 11, the working principle of the circuit As follows: the switch control signal is input to the control terminal of the switching transistor M, when the switching transistor M is closed, the external power supply Vdd rapidly charges the capacitor C, and the voltage detection circuit 11 detects that the voltage of the capacitor C is rapidly increased to Vdd, and then the switching transistor M is on the switch Disconnected under the control of the control...

AI Technical Summary

Problems solved by technology

[0003] There is such a problem in the above circuit: under high temperature conditions, even in the absence of light, the leakage current of photodiode D will be very large, which is similar to the leakage current of photodiode D in the case of light, resulting in the light intensity The detection circuit misjudged

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