Magnetron, sputtering cavity device and sputtering device

Abstract

The invention discloses a magnetron which comprises an outer magnetic pole and an inner magnetic pole. The outer magnetic pole is provided with first magnetic polarity, the inner magnetic pole is arranged in the outer magnetic pole and provided with second magnetic polarity which is opposite to the first magnetic polarity, a gap between the inner magnetic pole and the outer magnetic pole defines a track which is continuously closed, the inner magnetic pole comprises a first inner magnetic pole section and a second inner magnetic pole section which are in involute shapes, the first inner magnetic pole section and the second inner magnetic pole section are unfolded around the same base circle along the opposite directions, inner ends of the first inner magnetic pole and the second inner magnetic pole are connected with each other, and the outer magnetic pole and the inner magnetic pole are all centrally symmetrical along a circle center of the base circle. By means of the magnetron, a target which is provided with the magnetron doesn't require a counter weight, and a machine can stably rotate. The invention further provides a sputtering cavity device with the magnetron and a sputtering device.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a magnetron, a sputtering chamber device with the magnetron and sputtering equipment. Background technique [0002] In the manufacturing process of integrated circuits, magnetron sputtering technology (PVD) is widely used in the deposition of metal layers and metal nitride layers. [0003] Typical DC magnetron sputtering equipment such as Figure 6 As shown, the device has a circular reaction chamber 1'. The vacuum pump system 2' can evacuate the reaction chamber to achieve a background vacuum of about 10-8 Torr. A gas source 4' connected to the chamber via a flow meter 3' can supply sputtering process gases (such as argon, nitrogen, etc.). 5' is an electrostatic chuck for carrying wafers. 6' is the target material, which is sealed on the vacuum cavity. 7' is an insulating material (such as G10), which is filled with deionized water 8' between the material and the ta...

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Problems solved by technology

Its corrosion curve is as Figure 8 As shown, there are four relatively deep target etchings at 132, 134, 136, and 138, and the target etching at 136 is too deep and the etched target area is too large, which makes the utilization rate of the target lower

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