Method for growing InP base InAs quantum well

Abstract

The invention provides a method for growing an InP base InAs quantum well. The method comprise the steps of growing an InP buffering layer on an InP substrate, growing an InAs quantum well structure on the InP buffering layer, and growing an InP cover layer on the InAs quantum well structure, wherein In[1-x]Ga[x]As stress gradation barrier layers are formed on the two sides of the InAs quantum well structure. According to the method, the In[1-x]Ga[x]As stress gradation barrier layers with gradual lattice constant are introduced on the two sides of the InAs quantum well to decelerate compression strain suffered by the InAs quantum well; defect concentrations in materials, which are produced due to the accumulated release of the strain, are reduced; the crystal quality of the InAs quantum well materials is improved; and luminous wavelengths of the InAs quantum well materials are extended.

Description

technical field [0001] The invention belongs to the field of semiconductor material and device chip preparation, in particular to a method for growing an InP-based InAs quantum well. Background technique [0002] Due to the huge potential application advantages in gas detection and biomedicine, InP-based InAs quantum well materials and devices (lasers and detectors, etc.) with a light emission wavelength in the range of 2-3 μm have many advantages such as low cost and mature device technology. [0003] In 1994, InAs was used as the well, In 0.53 Ga 0.47 The InP-based quantum well structure material with As barrier was first applied in 1.7μm quantum well laser. With the development of metal organic compound vapor deposition (MOCVD) epitaxy technology, the application wavelength range of this material system has been expanded. In 2007, 2.33μm InP-based InAs / In 0.53 Ga 0.47 As quantum well laser. [0004] InP-based InAs / In 0.53 Ga 0.47 There are two problems in the epita...

AI Technical Summary

Problems solved by technology

[0004] InP-based InAs / In 0.53 Ga 0.47 There are two problems in the epitaxial growth of As quantum wells: 1. There is a huge lattice mismatch (3.2%) between the InAs quantum wells and the InP substrate, and the InAs quantum well material will produce defects under the condition of large compressive strain , affecting the quality of the material; 2. According to the law of quantum confinement effect, prolonging the luminous wavelength of the InAs quantum well requires increasing the thickness of the InAs layer, but this will cause the aggravation of the material strain, resulting in more defects, resulting in a decline in the quality of the material

However, the pseudo-substrate structure requires epitaxy of a pseudo-substrate material with a large thickness (>3 μm) and a gradual change in lattice constant, which increases the series resistance and manufacturing cost of the device to a certain extent.

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