Preparation method and device of high-conductivity carbon nanotube film

A carbon nanotube film and carbon nanotube technology, applied in the field of material science, can solve the problems of limited catalytic cracking reaction conditions, high temperature at the film forming place, difficulty in obtaining carbon nanotube film, etc., and achieve the effect of lowering the temperature

Active Publication Date: 2013-03-27
SUZHOU HANANO MATERIALS TECH LTD
View PDF4 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The other is based on the carbon nanotube suction filtration film forming technology formed by the floating catalytic cracking method. After the carbon nanotube gas is filtered through the filter membrane, a thin film is formed on the filter membrane. This method is limited by the size of the reaction tube and the porous filter. Due to the limitation of film size, it is difficult to obtain large-sized carbon nanotube films; at the same time, the obtained film needs to be transferred to form a film on the desired substrate, which is not only inconvenient to operate, but also difficult to transfer carbon nanotube films to On fragile glass substrates, resulting in great limitations in application
[0004] Recently, the inventor of this case also discovered that the patent with the publication number CN101707904A discloses a method of directly attaching carbon nanotubes prepared by the floating catalytic cracking method to a substrate to form a film, but the temperature used in this method is limited to below 200°C, greatly The reaction conditions of catalytic cracking are limited, which is not conducive to the synthesis of high-quality carbon nanotubes. At the same time, because of the high temperature at the film-forming place, it is difficult to form carbon nanotube films on polymer films. In addition, during the process of carbon nanotubes attaching to the substrate Lack of effective guiding force, it is difficult to achieve controllability and uniformity of the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and device of high-conductivity carbon nanotube film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] One aspect of the present invention relates to a method for preparing a highly conductive carbon nanotube film, including: using a floating catalytic cracking method to prepare a carbon nanotube aerosol at a temperature as high as 1250-1600°C, and preferably using a carrier gas The nanotube aerosol is introduced into the closed cavity, and a substrate is arranged at a position corresponding to the slit opened in the closed cavity, and a directional magnetic field is used to induce the carbon nanotubes in the closed cavity to pass through the narrow And oriented deposition onto the substrate to form a highly conductive carbon nanotube film.

[0037] When the light transmittance of the substrate is about 92%, the light transmittance of the highly conductive carbon nanotube film can be as high as 88%, and the surface resistance can be as low as 100Ω / □.

[0038] Further, to prevent the carbon nanotube aerosol from agglomerating, one or more air ultrasonic generators can also be ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method and device of a high-conductivity carbon nanotube film. The preparation method comprises the following steps: preparing a carbon nanotube aerosol at high temperature by utilizing a floating catalytic cracking method, introducing the carbon nanotube aerosol into a closed cavity, arranging a substrate in the position corresponding to a slit formed on the closed cavity, inducing a carbon nanotube in the closed cavity to penetrate the slit by an oriented magnetic field, and depositing the carbon nanotube on the substrate in an oriented manner to form the high-conductivity carbon nanotube film. According to the preparation method disclosed by the invention, the large-area, continuous, low-cost and high-efficient preparation of the high-performance carbon nanotube film can be realized; and under the situation that the light transmittance of the substrate is about 92%, the light transmittance of the high-conductivity nanotube film can be up to 88%, and the surface resistance can be as low as 100omega / unit.

Description

Technical field [0001] The invention relates to a method and device for preparing a conductive film, in particular to a method and device for preparing a highly conductive carbon nanotube film, belonging to the field of materials science. Background technique [0002] Since Iijima discovered carbon nanotubes in 1991, carbon nanotubes have received great attention in a series of fields due to their unique delocalized electronic structure and physical and chemical properties. As one of the important applications, carbon nanotube thin film technology has also made some progress in recent years. So far, there are mainly two ways to realize the preparation of carbon nanotube films. One of them is to subject the dispersed carbon nanotubes to film forming processes such as vacuum filtration, coating, and printing to obtain a carbon nanotube film, which we call the "wet method." In the wet film formation, after the carbon nanotubes are dispersed, the length and structure of the carbon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/448C23C16/26C01B31/02B82Y30/00B82Y40/00C01B32/162
Inventor 陈新江
Owner SUZHOU HANANO MATERIALS TECH LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products